IRFP460中文资料要点.docx
17页
IRFP460中文资料功率场效应管PRODUCT SUMMARYVDs (V)500Rds（口 nNVgs 二70 V0.27Qg (Max.) (nC)210Qgs (nC)29Qgd (nC)110ConfigurationSingle1、动态dV/ dt额定值2、额定重复性雪崩3、中央隔离安装孔4、快速切换5、易于并联6、简单的驱动要求特性：1、Vishay公司提供的具有最佳坚固耐用、快速切换特性的第三代场效应管，低 导通电阻和成本效益的最佳组合2、TO-247封装是工业和商业应用首选的具有更高功率水平的设备， 不需要使用TO-2200 ig TO-247的绝缘安装孔与TO-218封装相似但又优于TO-218,它还提供引脚tomeet的最安全规范的要求之间更大的爬电距离ORDERING INFORMATIONPackageTO-247Lead (Pb)-feeIRFP460PbFmmSnPb郦460SIHFP物ABSOLUTE MAXIMUM RATINGS Tc = 25 cCr unless otherwise notedPARAMETERSYMBOLLiurrUNITDrairvSource VoltageVds500VGai«-Sluice VoltageV骷±20Canbnuous Drain CurrentVGs at 10 V兀=25七b20ATC=1QO℃13Pulsed Drain Curren?喻册Linear Derating Factor2,2mSingle Pulse Avalanche Energy11E*S卿mJRepetitive Avalancte Currant3Iar州ARepetitive Avalanche Erberg^Ear28mJMaximum Power DissipationTc=25flCPc =2B0WPeak Diode Racovery dWrifdv/di*5V/ftsOperating Junction and Storage Temperature RangeLi展-55 tai-150Soldering Recommerxiatos (Peak Temperature)lorlOs3邮Mounting Torque6-32 or M3 screwWIbf-ri1JN m注释：a、重复性评估；最大结温值下的有限脉冲宽度(见图 11);b、VDD = 50 V,开始温度 TJ = 25 ° C, L = 4.3 mH, RG = 25 Q , IAS(=20 A 12);c、ISD < 20 A, dl/dt < 160 A/ s, VDD < VDS, TJ < 150 ° C.;d、根据情况选1.6mm.THERMAL RESISTANCE RATINGSPARAMETERSYMBOLTYP,MAX.UNITMaximum Ju notion -tn -A mbi&ntRthg-4D,3C/WCase-Eo-Sinit. Flat, Gre日目日d Surfec日Rmcs-Maximum Junction-to-Ca&e (Drain)RthJC-0.45SPECIFICATIONS Tj = 25 ℃, unless otherwise notedPARAMETERSYMBOLTEST CONDITIONSMIN.TYP.MAX.UNITStaticDrain-Source Breakdown VoltageVDSVGS = OV,lD = 250pA500■VVds Temperature CoefficientAVds/TjReference Io25 °C, l0 = 1 mA■0.63V/℃Gate-Source Threshold VoltageVGS(th)Vds = ^gs1 b = 250pA2.04.0VGate-Source LeakagehssVgs = ±20V■±100nAZero Gate Voltage Drain CurrentbssVDs = 500ViV6S = 0V■25VDs = 400V,VGS = 0VtTj = 125℃■250Drain-Source On-State ResistanceRDS(on|VGS=10 VlD = 12Ab0.270Forward Transconductance9fsVos=50V,lD = 12Ab13SDynamicInpul CapacitanceVGs=OV,Vos = 25 V, f= 1.0MHz. see fig. 54200pFOutput CapacitanceCoss870Reverse Transfer CapacitanceC【SS350Total Gate ChargeQgVGS=10 VlD = 20A, Vds = 400V see fig. 6 and 13b210nCGate-Source ChargeQgs29Gate-Drain ChargeQgd110Turn-On Delay TimeWon)VDd = 250V,Id = 20A1RG = 4.3fitFD = 13Qlseefig.10b18nsRise Timetr59Turn-Off Delay TimeWoll)110Fall 'imetl58Internal Drain InductancesBetween lead.6 mm (0.251) frcm /package and center of 4die contact *i5.0■nHInternal Source Inductance玲13•Drain-Source Body Diode CharacteristicsContnuous Source-Drain Diode CurrentIsMOSFET symbolshowing the /integral reverse 1p-n junction diode|.•20APulsed Diode Forward Current33.■80Body Diode VoltageVSDTj = 25℃,ls = 20A,V6S = 0Vb..1.8VBody Diode Reverse Recovery Time♦Tj = 25 ℃, lF = 20A, dl/dt = 100A/psb■570860nsBody Diode Reverse Recovery ChargeQ“•5.78.6pcForward Turn-On TimebnIntrinsic turr-on time is negligible (turn-on is dominated by - and Ld)注释：a、重复性评估；最大结温值下的有限脉冲宽度（见图 11）;b、脉冲宽度0 300 s; duty cycle < 2 %.在没有特殊说明的情况下典型温度为 25 C9i237 03 VGS, Gate-to-Source Voltage (V)Fig. 3 - Typical Transfer CharacteristicsVDSl Drain-to-Source Voltage (V)<)三(Dtnowscl0-Fig. 1 - Typical Output Characteristics, Tc = 25 ℃( £E」QFig. 2 - Typical Output Characteristics, Tc = 150 ℃Fig. 4 - Normalized On-Resistance vs. Temperature10 0008000600040002000010°101Drain-to-Source Voltage (V)Fig. 5 - Typical Capacitance vs. Drain-to-Source VoltageVGS = 0 VJ = 1 MHzC1ss = cgs + Cgd，Cds Shorted CC(Ld)①ujsopdp91237 050.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0102(4)caun① s」① >
