ID5S609F1国产单相半桥驱动芯片兼容IR2304_骊微电子
4页1、ChipownID5S609F1High Side & Low Side Gate Drive IC深圳市骊微电子科技有限公司芯朋微一级代理General descriptionThe ID5S609F1 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N- channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for mi
2、nimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications.Applicationl Small and medium- power motor driverl Power MOSFET or IGBT driverl Half-Bridge Power Convertersl Full-Bridge Power Convertersl Any Complementary Driver ConvertersFeaturesl Fully operational to +600 Vl 3.3 V and 5 V logic compatiblel dV/dt Immunity 50 V/nsecl Floating channel designed for bootstrap operationl Gate drive supply range from 10 V to 20 Vl UVLO for low side channel
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