ID7S0230D mos管驱动芯片自举替代NCP81155_骊微电子
4页1、ChipownID7S0230深圳市骊微电子科技有限公司芯朋微代理商General description18V Half Bridge Gate Drive ICFeaturesThe ID7S0230 is a single phase high voltage power MOSFET and IGBT gate driver optimized to drive the gates of both high-side and low-side power transistors. The floating channel driver design can accommodate BUS voltages as high as 18 V. With a wide operation voltage range, high or low side gate drive voltage can be optimized for the best efficiency. Internal adaptive non-overlap circuitry further reduces s
2、witching losses by preventing simultaneous conduction of both transistors. Both gate outputs can be driven low by applying a low logic level to the enable (EN) PIN.Applicationl E-cigarettel Wireless chargerl DC/DC Power ConvertersTypical Application Circuitl Fully operational to+18 Vl Wide gate drive supply voltage rangel 3.3V/5V input voltage compatiblel One PWM Signal Generates Both Driversl Anti-cross Conduction Protection Circuitryl EN function for disabling the driver outputsl HO in phase w
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