SKIIP83ACI2T1 西门康模块.pdf

by SEMIKRON0698B 16 67 Absolute Maximum Ratings SymbolConditions 1 ValuesUnits VCES VGES IC ICM Tj Tstg Visol Theatsink 25 80 C tp 1 ms Theatsink 25 80 C AC 1 min 1200 20 125 85 250 170 40 150 40 125 2500 V V A A C C V Inverse Diode IF IC IFM ICM IFSM I2t Theatsink 25 80 C tp 1 ms Theatsink 25 80 C tp 10 ms sin Tj 25 C tp 10 ms sin Tj 25 C 80 53 160 106 720 2600 A A A A2s Characteristics SymbolConditions 1 min typ max Units IGBT Inverter VCEsat td on tr td off tf Eon Eoff Cies Rthjh IC 100 A Tj 25 125 C VCC 600 V VGE 15 V IC 100 A Tj 125 C Rgon Rgoff 11 inductive load VCE 25 V VGE 0 V 1 MHz per IGBT 2 5 3 1 50 55 400 70 27 6 6 3 0 3 7 100 110 600 100 0 25 V ns ns ns ns mJ nF K W Diode 2 Inverter VF VEC VTO rT IRRM Qrr Eoff Rthjh IF 75 ATj 25 125 C Tj 125 C Tj 125 C IF 75 A VR 600 V diF dt 800 A s VGE 0 V Tj 125 C per diode 2 0 1 8 1 0 11 45 11 3 0 2 5 2 3 1 2 15 0 8 V V m A C mJ K W Current sensor for three phase output ac current SKiiP 83 AC 12 I Ip RMS Ipmax RMS Ip peak Rout Is RMS Ip Is Offset error Linearity delay time Bandwidth Continuous current T 100 C Vsuppl 15 V t 2 s t 10 s terminating resistance rated sensor current at Ip 50 ARMS transfer ratio IP 0 A T 40 100 C IP 10 80 90 20 50 1000 50 25 1 2000 0 2 0 1 1 1 0 100 80 3dB A A A mA mA s s kHz Temperature Sensor RTST 25 100 C1000 1670 Mechanical Data M1 Case case to heatsink SI Units mechanical outline see pages B 16 11 and B 16 12 2 5 M8 3 5Nm SKiiP 83 AC 12 SKiiP 83 AC 12 IMiniSKiiP 8 SEMIKRON integrated intelligent Power SKiiP 83 AC 12 SKiiP 83 AC 12 I 3 SKiiP 83 AC 12 IS 4 IGBT 3 phase bridge inverter Case M8 UL recognized file no E63532 more detailed characteristics of current sensors and temperature sensor please refer to part A common characteristics see page B 16 4 Options also available with powerful free wheeling diodes Data sheet on request 1 Theatsink 25 C unless otherwise specified 2 CAL Controlled Axial Lifetime Technology soft and fast recovery 3 With integrated closed loop current sensors 4 Extended current range data sheet on request B 16 680698 by SEMIKRON 0 40 80 120 160 0 200 012345 17V 13V 15V 11V 9V 7V IC A VCE V 83AC1201 0 40 80 120 160 200 012345 9V 7V 13V 15V 17V 11V IC A 83AC1202 VCE V 0 2 4 6 8 10 12 14 16 18 20 600V 800V VGE V 83AC1205 QG nC 0200400 600800 Fig 3 Turn on off energy f IC Fig 4 Turn on off energy f RG ICpuls 100 AVGE 0 V f 1 MHz Fig 1 Typ output characteristic tp 80 s 25 CFig 2 Typ output characteristic tp 80 s 125 C Fig 5 Typ gate charge characteristicFig 6 Typ capacitances vs VCE Tj 125 C VCE 600 V VGE 15 V IC 100 A Tj 125 C VCE 600 V VGE 15 V RG 11 B 16 40698 by SEMIKRON Tj 150 C VGE 15 V tsc 10 s Lext 25 nH Tj 150 C VGE 15 V Tj 150 C VGE 15 V Fig 9 Turn off safe operating area RBSOA of the IGBTFig 10Safe operating area at short circuit of the IGBT Fig 7 Rated current of the IGBT ICop IC f Th 0 0 2 0 4 0 6 0 8 1 0 1 2 55 751 1 515 ICop IC Mini1207 Th C 0 0 5 1 1 5 2 2 5 050010001500 ICpuls IC Mini1209 VCE V 0 2 4 6 8 10 12 050010001500 Note Allowed numbers of short ci rcuit 1s ICsc ICN Mini1210 VCE V Fig 11Typ freewheeling diode forward characteristicFig 12Forward characteristic of the input bridge diode MiniSKiiP 1200 V MiniSKiiP 8 Inverter part SKiiP 82 AC 06 SKiiP 83 AC 06 SKiiP 81 AC 12 SKiiP 82 AC 12 SKiiP 83 AC 12 Circuit Case M8 Note The current sensors are available only by option I MiniSKiiP 8 Inverter part SKiiP 82 AC 06 SKiiP 83 AC 06 SKiiP 81 AC 12 SKiiP 82 AC 12 SKiiP 83 AC 12 Case M8 Layout and connections for the customer s printed circuit board pinconnection optional 1T 2T 3 1ET1 CB1 4GB1 5GT1 6 EB1EB2EB3 7 CT1CT2CT3 8GB2 9GT2 10 2ET2CB2 11 CT1CT2CT3 12 EB1EB2EB3 13GT3 14 3ET3CB3 15GB3 16K1 for 1X 17K2 for 1X 18S1 for 1X 19S2 for 1X 20K1 for 2X 21K2 for 2X 22S1 for 2X 23S2 for 2X 24K1 for 3X 25K2 for 3X 26S1 for 3X 27S2 for 3X 。