压力传感器温度补偿的研究报告.doc

毕业设计〔论文〕题 目： 压力传感器温度补偿的研究姓 名： 学 号： 指导教师(职称)： 专 业： 班 级： 所 在 学 院： 2021年 6 月 . z-目 录摘 要 ……..........................…………………………..…………………………………..… IIAbstract …………………………………………………………………………………... III第一章 绪论……...………………………...……………………...………………………... 11.1 压力传感器概述…………………………………………………………………… ......11.2 压力传感器的现状及开展趋势……………………………..…………………… .. .....11.3 硅桥式压阻压力传感器的简介及特点…………......…..………………..… .. .............31.4 温度补偿的意义……............................…………………………..……………… .. .....31.5 论文安排………………………………..………………........................................... .. ....4第二章 硅桥式压阻压力传感器的原理及分析………………………………………….…..52.1 硅桥式压阻压力传感器工作原理………………………………………………….. …52.2 硅桥式压阻压力传感器温度漂移产生的机理…………………………………. …….72.3 压力传感器的性能指标…..................................…………………………………. …...8第三章 硅桥式压阻压力传感器温度补偿研究…………………………………..……… ..113.1 温度补偿的技术指标…………………………………………………………. ……...113.2 常见的补偿方式简介…………………………………………………………….... …113.3 传感器的输出温度特性研究…………………………………………………. ……...133.4 补偿思路……...........……………..........…………………………………………... …13第四章 温度补偿电路的设计………………………………………………………..……..154.1温度补偿电路构造分析…………………….………………….….……...…………. …154.2带隙基准电压源的电路设计………………….………………….…………………. …154.3 PTAT电压和鼓励电压源的产生.…………………………….………………. …294.4电压缓冲器的设计…….………………………….…….……………….………………304.5总体电路设计…….…….…….……. ….……………….…………………….…….…...31总结 …….……………………...………………………………....……………………….…33致 …….……………………………………………………..……...………………….…34参考文献 …….………………..………………………………..………………………...….35摘要随着现代工业向着微型化、集成化、精细化开展,实现准确测量就显得非常重要，对传感器的精度要求越来越高成为必然。

硅桥式压阻压力传感器以其线性度好、灵敏度高、体积小、便于集成等诸多优点,成为现今被应用最多旳压力传感器硅桥式压阻压力传感器是利用半导体的压阻效应来实现从作用力至电信号的转换，较之于传统的电阻应变式传感器具有灵敏度高，线性度好，滞后性小，体积小，响应快，便于与调理电路集成、测量精度高、稳定性好、频率响应围宽、易于小型化等显著优点，因此得到了迅速的开展，并被应用到各个领域但是硅桥式压阻压力传感器因为其使用的半导体材料硅的固有特性，其存在着一致性、温度漂移和非线性等问题其中受温度的影响最大，不同温度下传感器的灵敏度和测量精度的差异很大，这就大大的影响了硅桥式压阻压力传感器应用故对硅桥式压阻压力传感器的温度补偿研究工作就显得十分重要基于硅桥式压阻压力传感器的构造和原理，本文分析温度漂移产生的原因，分析了零位温度漂移和灵敏度温度漂移根据在常电压供电,恒定压力下传感器的输出灵敏度温度特性方程,设计了一个输出与温度呈线性正比的鼓励电压源来驱动传感器的温度补偿方案给出了鼓励电压源的温度特性方程,并分析了实现温度补偿需要满足的条件根据电压源的温度特性方程设计了补偿电路的各模块，其中包括：电压缓冲器、PTAT电路和带隙基准电压源。

Kujik构造是带隙基准电压源的核心电路，本论文在此对它作了改进通过叠加共源共栅构造来提高了电源电压抑制比，并且运用了深度负反应的两级折叠式共源共栅运算放大器来“钳位〞PTAT电压从带隙基准电压源中获得，并与基准电压相加得到了所需温度特性的鼓励电压在鼓励电压之间增加了一个电压缓冲器来解决传感器的输入电阻较小的问题电压缓冲器是一个两级运算放大器，其输出跟随鼓励电压直接驱动传感器关键字：硅桥式压阻压力传感器；温度补偿；PTAT电路；带隙基准电压源Abstract With the modern industrial developing towards miniaturization,integration and precision,accurate measurement is important.Therefore,there are higher requirements.The silicon bridge piezoresistive pressure sensor with its good linearity, high sensitivity, small size, easy integration and many other advantages, has became the most widely used pressure sensor.The silicon bridge piezoresistive pressure sensor can fulfill the function from acting force to electticity signal by using the semiconductor piezoresistive effect. pared with traditional resistance strain-gage transducer,The silicon bridge piezoresistive pressure sensor has the advantages of good linearity, high sensitivity，small lag ,small size,higher performance and response speed,and it can be integrated to conditioning circuit with high measurement precision,good stability, wide working frequency range and being miniaturized and produced easily,all of which make it rapidly developed and widely used to each field.But due to materials and processes of this sensor,the consistency ,the temperature drift inevitably and nonlinearity occur. Owing to the characteristic, in the unstable temperature environment, its application is limited. So it’s very important to research the temperature pensation.From the structure and principles of the silicon bridge piezoresistive pressure sensor, based on the mechanism of temperature drift,zero temperature drift and sensitivity temperature drift are analyzed. According as the temperature characteristic equation of the sensor output sensitivity under 5V supply voltage with a constant input pressure, the scheme of using a e*citation voltage source with increasing output voltage linearly by increasing temperature to drive the sensor is designed.he temperature characteristic equation of the voltage source is presented, and the conditions to achieve temperature pensation are analyzed.On the basis of the temperature characteristic equation of the voltage source, the modules of pensation circuit are designed, including: , the voltage buffer ,PTAT voltage and the bandgap reference voltage source.The core circuit of the bandgap reference voltage source is Kujik structure,and it has been improved by adding cascade devices to improve power supply rejection ratio in this research.Using a two folded cascade operational voltage amplifier in deep negative feedback state to 〞clamp voltage The PTAT voltage is obtained from the bandgap reference voltage source circuit, which is summed with the reference voltage can get the e*citation voltage of the de。