IC制程专有名词目录.doc

页次英文名称中文名称1Active Area主动区（工作区）2ACETONE丙酮3ADI显影后检查4AEI蚀刻后检查5AIR SHOWER空气洗尘室6ALIGNMENT对准7ALLOY/SINTER熔合8AL/SI铝/硅 靶9AL/SI/CU铝/硅/铜10ALUMINUN铝11ANGLE LAPPING角度研磨12ANGSTRON埃13APCVD（ATMOSPRESSURE）常压化学气相沉积14AS75砷15ASHING，STRIPPING电浆光阻去除16ASSEMBLY晶粒封装17BACK GRINDING晶背研磨18BAKE, SOFT BAKE, HARD BAKE烘烤，软烤，预烤19BF2二氟化硼20BOAT晶舟21B.O.E缓冲蚀刻液22BONDING PAD焊垫23BORON硼24BPSG含硼及磷的硅化物25BREAKDOWN VOLTAGE崩溃电压26BURN IN预烧试验27CAD计算机辅助设计28CD MEASUREMENT微距测试29CH3COOH醋酸30CHAMBER真空室, 反应室31CHANNEL信道32CHIP ,DIE晶粒33CLT（CARRIER LIFE TIME）载子生命周期34CMOS互补式金属氧化物半导体35COATING光阻覆盖36CROSS SECTION横截面37C-V PLOT电容, 电压圆38CWQC全公司品质管制39CYCLE TIME生产周期时间41DEFECT DENSITY缺陷密度42DEHYDRATION BAKE去水烘烤43DENSIFY致密化44DESCUM电浆预处理45DESIGN RULE设计规范46DESIGN RULE设计准则47DIE BY DIE ALIGNMENT每FIELD均对准48DIFFUSION扩散49DI WATER去离子水50DOPING掺入杂质51DRAM , SRAM动态, 静态随机存取内存52DRIVE IN驱入53E-BEAM LITHOGRAPHY电子束微影技术54EFR（EARLY FAILURE RATE）早期故障率55ELECTROMIGRATION电子迁移56ELECTRON/HOLE电子/ 电洞(空穴)57ELLIPSOMETER椭圆测厚仪58EM（ELECTRO MIGRATION TEST）电子迁移可靠度测试59END POINT DETECTOR终点检测器60ENERGY能量61EPI WAFER磊晶芯片62EPROM (ERASABLE-PROGRAMMABLE ROM)电擦写可编程只读存储器63ESDELECTROSTATIC DAMAGEELECTROSTATIC DISCHARGE静电破坏静电释放64ETCH蚀刻65EXPOSURE曝光66FABRICATION（FAB）制造67FBFC（FULL BIT FUNCTION CHIP）全功能芯片68FIELD/MOAT场区69FILTRATION过滤70FIT（FAILURE IN TIME）71FOUNDRY客户委托加工(代工)72FOUR POINT PROBE四点检测73F/S（FINESONIC CLEAN）超声波清洗74FTIR傅氏转换红外线光谱分析仪75FTY（FINAL TEST YIELD）76FUKE DEFECT77GATE OXIDE闸极氧化层78GATE VALVE闸阀79GEC（GOOD ELECTRICAL CHIP）优良电器特性芯片80GETTERING吸附81G-LINEG-光线82GLOBAL ALIGNMENT整片性对准与计算83GOI（GATE OXIDE INTEGRITY）闸极氧化层完整性84GRAIN SIZE晶粒大小85GRR STUDY (GAUGE REPEATABILITY AND REPRODUUCIBILITY)测量仪器重复性与再现性的研究86H2SO4硫酸87H3PO4磷酸88HCL氯化氢（盐酸）89HEPA高效率过滤器90HILLOCK凸起物91HMDSHMDS蒸镀92HNO3硝酸93HOT ELECTRON EFFECT热电子效应94I-LINE STEPPERI-LINE步进对准曝光机95IMPURITY杂质96INTEGRATED CIRCUIT（IC）集成电路97ION IMPLANTER离子植入机98ION IMPLANTATION离子植入99ISOTROPIC ETCHING等向性蚀刻100ITY（INTEGRATED TEST YIELD）101LATCH UP栓锁效应102LAYOUT布局103LOAD LOCK传送室104LOT NUMBER批号105LPCVD（LOW PRESSURE）低压化学气相沉积106LP SINTER低压烧结107LPY（LASER PROBE YIELD）镭射修补前测试良率108MASK光罩109MICRO, MICROMETER, MICRON微，微米110MISALIGN对准不良111MOS金属氧化物半导体112MPY（MULTI PROBE YIELD）多功能检测良率113MTBF（MEAN TIME BETWEEN FAILURE）114N2, NITROGEN氮气115N, P TYPE SEMICONDUCTORN, P型半导体116NSG（NONDOPED SILICATE GLASS）无掺杂硅酸盐玻璃117NUMERICAL APERTURE（N.A.）数值孔径118OEB（OXIDE ETCH BACK ）氧化层平坦化蚀刻119OHMIC CONTACT欧姆接触120ONO（OXIDE NITRIDE OXIDE）氧化层-氮化层-氧化层121OPL（OP LIFE）（OPERATION LIFE TEST）使用期限（寿命）122OXYGEN氧气123P31磷124PARTICLE CONTAMINATION尘粒污染125PARTICLE COUNTER尘粒计数器126PASSIVATION OXIDE（P/O）防护层127P/D（PARTICLE DEFECT）尘粒缺陷128PECVD电浆CVD130PELLICLE光罩保护膜131PH3氢化磷132PHOTORESIST光阻133PILOT WAFER试作芯片134PINHOLE针孔135PIRANHA CLEAN过氧硫酸清洗136PIX聚醯胺膜137PLASMA ETCHING电浆蚀刻138PM（PREVENTIVE MAINTENANCE）定期保养139POCL3三氯氧化磷140POLY SILICON多晶硅141POX聚醯胺膜含光罩功能142PREHEAT预热143PRESSURE压力144REACTIVE ION ETCHING（R.I.E.）活性离子蚀刻145RECIPE程序146REFLOW回流147REGISTRATION ERROR注记差148RELIABILITY可靠性149REPEAT DEFECT重复性缺陷150RESISTIVITY阻值151RESOLUTION解析度152RETICLE光罩153REWORK/SCRAP/WAIVE修改 /报废/签过154RUN IN/OUT挤进/挤出155SCRUBBER刷洗机156SAD（SOFTWARE DEFECT ANALYSIS）缺陷分析软件157SEM（SCANNING ELECTRON MICROSCOPE）电子显微镜158SELECTIVITY选择性159SILICIDE硅化物160SILICIDE金属硅化物161SILICON硅162SILICON NITRIDE氯化硅163SMS(SEMICODUCTOR MANUFACTURING SYSTEMS)半导体制造系统164SOFT WARE, HARD WARE软件 ,硬件165S.O.G.（SPIN ON GLASS）旋制氧化硅166S.O.J.(SMALL OUTLINE J-LEAD PACKAGE)缩小型J形脚包装IC167SOLVENT溶剂168SPECIFICATION（SPEC）规范169SPICE PARAMETERSPIC参数170S.R.A(SPREADING RESISTENCE ANALYSIS)展布电阻分析171SPUTTERING溅镀172SSER（SYSTEM SOFT ERROR RATE TEST）系统暂时性失效比率测试173STEP COVERAGE阶梯覆盖174STEPPER步进式对准机175SURFACE STSTES表面状态176SWR（SPECIAL WORK REQUEST）177TARGET靶178TDDB（TIME DEPENDENT DIELECTRIC BREAKDOWN）介电质层崩贵的时间依存性179TECN（TEMPORARY ENGINEERING CHANGE NOTICE）临时性制程变更通知180TEOS（TETRAETHYLOR THOSILICATE）四乙基氧化硅181THRESHOLD VILTAGE临界电压182THROUGH PUT产量183TMP（TI MEMORY PROTOTYPE，TMS-X TI MEMORY STANDARD PRODUCT）TI 记忆产品样品（原型），TI内存标准产品184TOX氧化层厚度185TROUBLE SHOOTING故。