载板制程封装介绍.ppt

Unimicron Technology (SuZhou) Corp.0Do The Right Things.蘇州群策科技公司載板封裝介紹載板封裝介紹Unimicron Technology (SuZhou) Corp.1Do The Right Things.電子構裝基礎概念電子構裝基礎概念內容：內容：1. 1.構裝技術簡介構裝技術簡介 2. 2.最近十年之最近十年之ICIC構裝構裝3. 3.資料來源資料來源：呂宗興：呂宗興4. 4.Cell phone Cell phone ：：0932-936-1060932-936-1065. 5.clu0563@.twclu0563@.twUnimicron Technology (SuZhou) Corp.2Do The Right Things.電子構裝之定義及範圍電子構裝之定義及範圍定義定義：：微電子技術之發展日新月異，微電子技術之發展日新月異， 電子零組件之尺寸不斷縮小，電子零組件之尺寸不斷縮小， 零組件之間必須透過高效能、零組件之間必須透過高效能、 高可靠性、高可靠性、 高密度及低成高密度及低成本之互連本之互連 ( Interconnection ) ( Interconnection )，才能建構成一個具有廣泛性功，才能建構成一個具有廣泛性功能及實用價值之電子產品；能及實用價值之電子產品； 而建構此互連技術之相關工程而建構此互連技術之相關工程技藝，被統合稱為電子構裝技術。

技藝，被統合稱為電子構裝技術 應用產品：應用產品：電腦、通訊、電子消費性產品電腦、通訊、電子消費性產品所需技術所需技術電子、機械、物理、化學、材料、光學、可靠性工程、人電子、機械、物理、化學、材料、光學、可靠性工程、人因工程因工程……等多重之工程技術等多重之工程技術Unimicron Technology (SuZhou) Corp.3Do The Right Things.電子構裝之分級電子構裝之分級 晶圓晶圓(Wafer) →→ 晶片晶片(Chip) →→第一階層封裝第一階層封裝 → → 第二階層封裝第二階層封裝 → → 第三階層封裝第三階層封裝單晶片構裝單晶片構裝多晶片模組多晶片模組( MCM ：： Multi-Chips Module )模組板模組板Module board主機板主機板(母板母板)Mother boardUnimicron Technology (SuZhou) Corp.4Do The Right Things.電子構裝之主要功能電子構裝之主要功能1.有效供應電源有效供應電源2.提供信號傳輸提供信號傳輸3.協助排除耗熱協助排除耗熱4.保護電子零件保護電子零件5.建構人機介面建構人機介面Unimicron Technology (SuZhou) Corp.5Do The Right Things.常見之封裝形式常見之封裝形式二面出腳二面出腳 四面出腳四面出腳 DIP 挿件式挿件式( Dual In-Line Package )SOP SMD device( Small Outline Package )SOJ( Small Outline J-Lead )PLCC( Plastic Leaded Chip Carrier )QFP ( Quad Flat Pack )PGA( Pin Grid Array )PBGA (Plastic ball Grid Array)Unimicron Technology (SuZhou) Corp.6Do The Right Things.單晶片構裝之基本結構單晶片構裝之基本結構膠體膠體 ( Epoxy Molding Compound )優點優點：：膠體對稱膠體對稱，，不易產生翹曲不易產生翹曲晶片晶片(Chip)金線金線(Gold Wire)銀膠銀膠(Silver Epoxy)晶片座晶片座(Die Pad)引腳引腳(Lead)Unimicron Technology (SuZhou) Corp.7Do The Right Things.BGA(Ball Grid Array)構造構造缺點缺點：：膠體不對稱膠體不對稱，，易產生翹曲易產生翹曲First bondingMold compoundChipGold wireAg pasteThrough hole Ball mount 目的目的：： 接地接地&散熱散熱Thermal via holeGroundSolder patternSolder ballsSolder resistBonding patternSecond bondingUnimicron Technology (SuZhou) Corp.8Do The Right Things.使用導線架使用導線架(Leadframe)之單晶片構裝之單晶片構裝1. L型引腳型引腳 (Lead)2. J型引腳型引腳3. I型引腳型引腳4. 無引腳無引腳 (Non Lead) QFN(Quad Flat Non-lead)5. 晶片座晶片座 (Die Pad)優點優點：：1. 1. 散熱能力佳散熱能力佳 2. 2. 面積小面積小( (無須預留接腳空間無須預留接腳空間) ) 3. 3. 傳輸距離短傳輸距離短 4. 4. 無腳彎翹風險無腳彎翹風險缺點缺點：：Molding Molding 困難度較高困難度較高 ( (不對稱，易發生翹曲不對稱，易發生翹曲 ) )優點優點：散熱能力佳：散熱能力佳Unimicron Technology (SuZhou) Corp.9Do The Right Things.晶片互連技術晶片互連技術(Chip Interconnection)1. 焊線接合焊線接合(Wire Bonding)—使使用金線或鋁線用金線或鋁線，， 以熱壓及超音波接合以熱壓及超音波接合2. 覆晶接合覆晶接合(Flip Chip Bonding)—使使用錫鉛迴銲或用錫鉛迴銲或(非非)導電膠固化接合導電膠固化接合3. 卷帶式接合卷帶式接合(TAB—Tape Automatic Bonding)—使使用金對金熱壓接合用金對金熱壓接合Solder ball bond不用打線不用打線Gold bond註註：： TCP ( Tape Carrier Package ) 應用在應用在LCD driver上上。

Unimicron Technology (SuZhou) Corp.10Do The Right Things.單晶片構裝之演變單晶片構裝之演變PTH → SMT → Area Array → Fine Pitch Area Array1970 1980 1990 2000 2010TODIPQFPPGABGATCPChip Scale PackageDirect Chip Attach on Board* 一定要使用較小的一定要使用較小的IC (CTE過大易裂過大易裂 )Wire Bond ↓↓ Flip Chip 的應用的應用1.電訊上的考慮電訊上的考慮(速度速度、、 傳輸路徑短傳輸路徑短 )2. IO數的考量數的考量(IO數數較較Ball Pad受限受限)Unimicron Technology (SuZhou) Corp.11Do The Right Things.BGA構裝之分類構裝之分類類別PBGATBGACBGACCGAMicro BGA基板BT樹脂Polyimide多層陶瓷多層陶瓷Optional膠體結構Over moldGlob TopCapOptional CapOptional CapOptional CapOver moldGlob TopOptional Cap膠體尺寸7~50 mm21~40 mm18~32 mm32~42.5mmChip Scale晶片方向Up / DownUpUp / DownUp / DownUp / Down錫球Solder Ball63Sn / 37pbSolder Ball10Sn / 90pbSolder Ball10Sn / 90pbSolder Column10Sn / 90pbMetal BallSolder / Gold間距1.0/1.27/1.51.0/1.27/1.51.0/1.27/1.51.0/1.27/1.50.8/0.5面積效率(Chip=1)7.25.34.54.51~1.4 Plastic Tape Ceramic Unimicron Technology (SuZhou) Corp.12Do The Right Things.CSP(Chip Scale Package)＊＊ Definition：： Chip scale package (CSP) is a package whose package-to-silicon area ratio less than 120 percent.＊＊ CSP is derived from existing packages, that is, it can be any type of packages.SiliconChip Scale 構裝構裝覆晶覆晶(Flip Chip)技術技術＊＊ 小尺寸小尺寸＊＊低電感低電感＊＊高高I / OI / O表面黏著技術表面黏著技術(Surface Mount)＊＊ 標準化標準化＊＊易於生產易於生產＊＊可測性可測性＊＊可重工可重工＊＊可靠性可靠性定義定義：：Package areaPackage areaSilicon areaSilicon area≦ ≦ 1.2說明說明：封裝體愈小愈好，：封裝體愈小愈好， CSP CSP並非是封裝的名稱，並非是封裝的名稱， 只是封裝中的一類；只是封裝中的一類； 不同於不同於PBGAPBGAUnimicron Technology (SuZhou) Corp.13Do The Right Things.CSP之分類之分類1.硬板中介層硬板中介層(Rigid Substrate Interposer)2.導線架形式導線架形式(Leadframe Type)3.軟板中介層軟板中介層(Flex circuit Interposer)4.無中介層無中介層，， 壓模成型壓模成型(Transfer Molding)5.晶圓層級晶圓層級(Wafer-Level)說明說明：：先電鍍再上球先電鍍再上球，， Sawing完後再封裝完後再封裝PI 聚亞矽氨聚亞矽氨說明說明：：所有封裝在所有封裝在Wafer完成後完成後，， 再再SawingUnimicron Technology (SuZhou) Corp.14Do The Right Things.3D PackagesWire BondingWireless Bonding ( FCB , others )COC (Chip on Chip)CIB (Chip in Board)Through Hole疊疊Die後再鑽孔後再鑽孔；； 目前市場上目前市場上尚無此類產品尚無此類產品。

Unimicron Technology (SuZhou) Corp.15Do The Right Things.Multi Chip Module (MCM)＊＊ Definition：： Multi chip module is module or package which usually contains a high density interconnect substrate, several active and passive components, and a package which can be connected to the next level of interconnection.ChipSingle Chip ModuleChipChipChipChipMulti Chip ModuleUnimicron Technology (SuZhou) Corp.16Do The Right Things.What is KGD?＊＊ Known Good Die (KGD) is a which has been manufactured and delivered in a bare, or minimally packaged die format, which＊＊ has quality and reliability comparable to its functionally equivalent packaged component, ＊＊ can be interconnected to its next level of packaging by wire bond, tape automated bonding, or flip-chip.說明說明：： 已知是好的已知是好的Die封裝進度封裝進度，， Wafer sawing 無法無法100% 檢出檢出IC是好是壞是好是壞? 原因原因：： 1.檢驗困難度高檢驗困難度高2.成本貴成本貴3.大部份的是大部份的是IC封完後測出封完後測出IC是好是壞是好是壞?Unimicron Technology (SuZhou) Corp.17Do The Right Things.封裝製程介紹封裝製程介紹IC Assembly Process IntroductionUnimicron Technology (SuZhou) Corp.18Do The Right Things.PBGA Assembly Process Wafer IncomingWafer GrindingWafer SawingDie BondingPlasma CleanWire BondingInterconnecting 完成完成MoldingBall MountReflowFlux CleanSingulation(Punch or Routing)Ball ScanFinal InspectionTapingDe-TapingSubstrate pre-bakeCuringO/S Test or 3rd Vision Insp.Plasma CleanTop Marking & CuringUnimicron Technology (SuZhou) Corp.19Do The Right Things.Assembly Process Wafer IncomingWafer Incoming Inspection1.Wafer in wafer carrier2.Wafer in wafer box3.Dice in waffle pack1.檢驗方法檢驗方法：： 一般都是以抽驗方式執行一般都是以抽驗方式執行。

(例如一個例如一個Wafer lot 抽抽 1~2 wafers, 每個每個wafer 固定檢驗固定檢驗 ~ pcs 〔〔10 10 pcspcs〕〕 )2.檢驗工具檢驗工具：：3. 3. 一般檢驗：光學顯微鏡一般檢驗：光學顯微鏡 30X~100X30X~100X4. 4. 辨認用：金相高倍顯微鏡辨認用：金相高倍顯微鏡 100X~1000X100X~1000XUnimicron Technology (SuZhou) Corp.20Do The Right Things.Assembly Process Wafer Grinding1.Wafer in Taping ( Top Side )2. --- To protect die surface3.2. Wafer Grinding ( Bottom Side )4. --- To get needed die thickness3.Wafer Cleaning / Drying4.De-Taping --- To remove taping tapeUnimicron Technology (SuZhou) Corp.21Do The Right Things.Assembly Process Wafer MountWafer Mounting ( Bottom Side )--- To put wafer onto tape & wafer frame--- Blue tape or UV tape說明說明：： Blue tape →→ 黏性一致黏性一致UV tape →→黏性較黏性較 Blue tape Blue tape強，強， 照照 UV UV光後黏性會降低，光後黏性會降低， 較易取較易取 Die Die；缺點是成本較貴；缺點是成本較貴Control Item：： No bubble & particle on the backsideNo Wafer crack, chipout or scratchUnimicron Technology (SuZhou) Corp.22Do The Right Things.Assembly Process Wafer Sawing--- To singulate die to single unit --- 2 steps cutting說明說明：一刀切：一刀切 Wafer Wafer 所受應力較大所受應力較大 二刀切割方式缺點是耗時二刀切割方式缺點是耗時Water Cleaning / Drying說明說明：：純水有規格，因純水不易導電，所以需添加二氧化碳純水有規格，因純水不易導電，所以需添加二氧化碳；自來水有一些況物；自來水有一些況物質或雜質會腐蝕質或雜質會腐蝕 IC ICUV Irradiating ( option process )---To reduce UV tape adhesion strengthUnimicron Technology (SuZhou) Corp.23Do The Right Things.Assembly Process 2nd Optical inspection＊＊Die damaged?Die damaged?＊＊Sawing quality?Sawing quality?＊＊Die surface contamination?Die surface contamination?Unimicron Technology (SuZhou) Corp.24Do The Right Things.Assembly Process Die Bonding--- To pick die onto substrate or lead-frameCuring---To cure die attach adhesiveUnimicron Technology (SuZhou) Corp.25Do The Right Things.Assembly Process 常見之常見之Die Bonding 缺陷缺陷1.Die crack ：頂：頂針針 issue ，，通常在通常在 Die 的背面，不易發現的背面，不易發現2. --- force3. --- size2.Die mis-placement 放歪，不正放歪，不正3.Epoxy contamination4. --- reject for any epoxy on die surface5. --- reject for any epoxy on lead 4.Epoxy overflow5. 注意事項：膠不可高於注意事項：膠不可高於 Die 面，面，die bond 有污染與有污染與Short風險風險6.5. Epoxy cover ≧≧ 75% Unimicron Technology (SuZhou) Corp.26Do The Right Things.Assembly Process Wire Bonding＊＊Plasma Cleaning ( optional ) --- To clean bonding pad surface to increase bonding quality＊＊Wire Bonding --- To bond gold wire to connect die and substrateProduction 檢測項目檢測項目＊＊Wire pull＊＊Ball shearUnimicron Technology (SuZhou) Corp.27Do The Right Things.Assembly Process Loop High Control＊打線高度須受限＊打線高度須受限，，Base on compound Base on compound 高度，一般而言，需保留高度，一般而言，需保留 SurfaceSurface距離距離25um10um 以上Unimicron Technology (SuZhou) Corp.28Do The Right Things.常見之常見之Wire Bonding 缺陷缺陷1.Bond on epoxy / foreign material2.Missing wire3.Bond lift 金線脫落金線脫落4. non stick on pad --- NSOP5. non stick on lead --- NSOL4.Pad metal lift5. ＊＊鋁墊拉起可能原因鋁墊拉起可能原因6. (1) 污染污染7. (2) 打線參數不佳打線參數不佳Assembly Process 5. Sagging wire ＊線塌＊線塌：人為導致的比率較高：人為導致的比率較高6.Shorting wire7.Shorting bond8.Miss-placed bond9.其他其他( Over bond、、 Stray wire…)Unimicron Technology (SuZhou) Corp.29Do The Right Things.Molding Plasma Cleaning ( optional ) --- To modify substrate surface condition to increase adhesion strength between molding compound & substrate.Molding--- To protect die & gold wire from damage, easy to handle.Post Mold Curing--- To cure molding compound ~ 175℃ / 8 hrsAssembly Process 功能1. 清除表面污染2. 活化綠漆表面，，增加Compound 的附著力Unimicron Technology (SuZhou) Corp.30Do The Right Things.固體固體EMC移送成型移送成型-Transfer MoldingTransfer molding方法方法1.半導體半導體Chip / Leadframe 半成品置入成型模具半成品置入成型模具2.預熱後固狀封裝材料投入成型機預熱後固狀封裝材料投入成型機 Pot中中3.模具溫度約模具溫度約175℃ 條件下條件下，封裝材料溶融，以，封裝材料溶融，以 Plunger Plunger 加加壓材料流入模具中壓材料流入模具中4. 4.封裝材料加壓成型熱硬化封裝材料加壓成型熱硬化90 ~120 90 ~120 秒後，模具打開取出成品，秒後，模具打開取出成品，完成半導體成型封裝完成半導體成型封裝Unimicron Technology (SuZhou) Corp.31Do The Right Things.建議後硬化條件建議後硬化條件 Post Mold Cure ConditionMolding condition template轉進時間轉進時間：取決壓桿速度影響模流：取決壓桿速度影響模流Unimicron Technology (SuZhou) Corp.32Do The Right Things.材料成型材料成型 成型前準備成型前準備 Preparation冷凍保存冷凍保存(10℃℃ )Cold Storage (10℃℃ )回溫回溫Stabilizing( ~25℃℃ , 50~70%RH )成型成型 Molding再保存再保存(必要時必要時 )Re-Storage在成型車間在成型車間, 原封不動原封不動. 需回溫需回溫16~24小小時時. (溫度平衡溫度平衡)1. 不要用手直接碰觸黑膠不要用手直接碰觸黑膠2. 24小時內使用完畢小時內使用完畢1. 需重新包裝好需重新包裝好2. 回溫後回溫後24小時內用完小時內用完說明說明：用剩下的：用剩下的,大部份會丟掉大部份會丟掉(因因Compound粒碇在常溫下仍會吸濕與反應粒碇在常溫下仍會吸濕與反應 再使用可能會有品質問題再使用可能會有品質問題)Unimicron Technology (SuZhou) Corp.33Do The Right Things.常見之常見之Molding 缺陷缺陷1.充填充填不良不良 ( Incomplete Fill )2.黏膜黏膜 ( Sticking )3.氣孔氣孔 ( Void/Blister )4.金線歪斜金線歪斜 ( Wire Sweep )5.晶片座偏移晶片座偏移 ( Pad Shift )6.表面針孔表面針孔 ( Rough Surface in Pin Hole)7.流痕流痕 ( Flow Mark )8.溢膠溢膠 ( Resin Bleed )Unimicron Technology (SuZhou) Corp.34Do The Right Things.金線歪斜金線歪斜 ( Wire Sweep )Unimicron Technology (SuZhou) Corp.35Do The Right Things.PBGA Assembly Process Ball Mounting＊＊Flux --- To print flux onto ball pad area＊＊Ball Mounting --- To place solder ball onto substrate＊＊Reflow --- To connect solder ball & substrate＊＊Flux Cleaning --- To clean residual fluxUnimicron Technology (SuZhou) Corp.36Do The Right Things.Assembly Process Ink Marking 方式方式1.蓋印蓋印2.雷射雷射Unimicron Technology (SuZhou) Corp.37Do The Right Things.PBGA Assembly Process Singulation＊＊Singulation --- To singulate package from strip to single unit＊＊Ball Scan --- To check coplanarity ( PKG warp & ball standoff quality)＊＊Final Inspection --- To check PKG appearance qualityUnimicron Technology (SuZhou) Corp.38Do The Right Things.FVI & PackingAssembly Process Defect of ball Mounting--- Missing ballUnimicron Technology (SuZhou) Corp.39Do The Right Things.DoFu BGA vs. PBGA差異差異：切割方式不同：切割方式不同；； DoFu BGA (Sawing) ；； PBGA (Punch) DoFu BGAPBGADoFu Ball Grid ArrayPlastic Ball Grid ArrayUnimicron Technology (SuZhou) Corp.40Do The Right Things.Die Attach MaterialUnimicron Technology (SuZhou) Corp.41Do The Right Things.Function and Composition of Die Attach MaterialFunctions＊＊Mechanical attachment of die to lead frame pad / substrate＊＊Heat transfer from die to lead frame / substrate＊＊Electrical contact from the die to the lead frame / substrateUnimicron Technology (SuZhou) Corp.42Do The Right Things.How to Choose a Suitable Die Attach MaterialMaterial selection consideration 1. Good dispensability 黏度黏度 2. Void free 空洞多空洞多, 表示含水氣表示含水氣 3. Good thermal conductivity for heat dissipation 散熱散熱 4. High adhesion strength 黏附力黏附力 5. Low stress ( stress 太高太高, 會產生會產生Warpage 膠材膠材 ) 6. Low moisture uptake 不吸水不吸水 7. Low ionic content 低鹵素低鹵素, 鹼性分子鹼性分子 8. Cure profile ( fast cure / snap cure ) Cure 愈快愈快, 應力愈大應力愈大 9. Work life 回溫時間約一天時間回溫時間約一天時間, 沒用完沒用完 , 即丟棄即丟棄 10. Low outgassing ( 跑出來的氣體跑出來的氣體 ,反沾回表面反沾回表面 ) 11. Low resin bleed out 暈開效果暈開效果Unimicron Technology (SuZhou) Corp.43Do The Right Things.Good thermal conductivity銀粉結晶結構銀粉結晶結構 --- 片狀不規則結晶體片狀不規則結晶體Silver flakes for electrical conductive die attach materialSilica ( SiO2 )結晶結構結晶結構 --- 球狀結晶體球狀結晶體Spherical Silica for electrical non-conductive die attach materialUnimicron Technology (SuZhou) Corp.44Do The Right Things.Factors of Die Attach Material to Reliability ＊＊Controlled stress ：：warpage and modulus ＊＊Improved adhesion ＊＊Reduced moisture absorptionMoisture absorptionStressAdhesionStress 低 , Tg低 Tg高 , 吸水性低與 Tg有連帶關係Unimicron Technology (SuZhou) Corp.45Do The Right Things.Stress – Modulus ＊＊Stress comes from CTE mis-match Lower adhesive modulus, lower stressLow Ionic Content＊＊Presence of Chloride, Potassium, and Sodium ions in conjunction with moisture may affect package reliability.＊＊Corrosion of circuitry and wirebond pads may be caused by ionically impure material.＊＊Modern semiconductor grade materials typically have less than 10 ppm chloride.Unimicron Technology (SuZhou) Corp.46Do The Right Things.Defect Mode＊＊Incomplete Fill 1. 與銀膠與銀膠 quality有關有關 2. 點膠量不夠點膠量不夠 ＊＊ SM Crack 通常發生在通常發生在PCT之後之後 ( 121℃℃ , 2個大氣壓力下個大氣壓力下)Unimicron Technology (SuZhou) Corp.47Do The Right Things.Wire Bonding TechnologyUnimicron Technology (SuZhou) Corp.48Do The Right Things.Bonding Sequence1. 結金球結金球2. First Bond3. 凹弧形凹弧形4. Second Bond5. 截斷金線截斷金線Unimicron Technology (SuZhou) Corp.49Do The Right Things.Thermosonic Bonding＊＊Heat PBGA加熱溫度加熱溫度 130 ℃℃ ~ 150 ℃℃ Lead frame加熱溫度加熱溫度 210 ℃ ℃ ＊＊ Force＊＊Ultrasonic Energy 超音波能量超音波能量＊＊TimeUnimicron Technology (SuZhou) Corp.50Do The Right Things.Bond WireUnimicron Technology (SuZhou) Corp.51Do The Right Things.Bond Wire Categories＊＊Gold wire Most popular ＊＊ Aluminum wire For wedge bond＊＊Copper wire Emerging for Cu pad IC說明說明：：COB ( Chip on Board )Unimicron Technology (SuZhou) Corp.52Do The Right Things.Au Wire Categories＊＊Standard Package Thickness Standard Low loop High tensile / long loop strength＊＊ Thin Packages Low LoopUnimicron Technology (SuZhou) Corp.53Do The Right Things.Au Wire Chemical Composition＊＊Dopants 1. Standard wire – Beryllium dopant is used 2. Low loop – Beryllium and Ca used by all PPM levels differ for thin PKG 3. High tensile strength – Main Palladium 10% strength higher than others. 4. Long Loop wire – All supplier uses different dopant. Dopants are proprietary of suppliers 5. Max content level ：：usually Ag – 30 ppm, Ca – 30 ppm, and Be – 10 ppmUnimicron Technology (SuZhou) Corp.54Do The Right Things.Epoxy Molding CompoundUnimicron Technology (SuZhou) Corp.55Do The Right Things.Compounds of EMCs Used in Packages說明說明: T.C: Thermal Conductivity M.A: Moisture AbsorptionUnimicron Technology (SuZhou) Corp.56Do The Right Things.Measurement of Compound Properties＊＊Flowability * Spiral Flow * Kokashiki Viscosity * Laboplasttmill Torque * Cone-Plate Viscometer＊＊ Filling ability ( Gelled Particle ) * Acetone Insoluble Content ＊＊Cureability * Gel Time * Curelastmeter Torque * Laboplastmill Stable time * Hot Hardness Unimicron Technology (SuZhou) Corp.57Do The Right Things.Spiral Flow / Flowability＊＊Mold Condition * Sample Powder * Mold Temp. 175± 2 ℃ * Transfer Pressure 70± 2 kg / cm2 * Cure Time 120 s * Cull Thickness 3.0± 0.3 mm＊＊ Measurement * Obtain the spiral flow value by measuring the length (cm) of the molded spiral tip. Unimicron Technology (SuZhou) Corp.58Do The Right Things.Gel Time / Cureability1.熱盤溫度設定熱盤溫度設定 175± 1 ℃ 2.將將 2g 樣品放置熱盤中樣品放置熱盤中3.樣品溶融開始計時樣品溶融開始計時，， 並以刮杓成約並以刮杓成約 25度角磨動樣品度角磨動樣品4.當硬化時刮杓與樣品剥離當硬化時刮杓與樣品剥離，， 判定時間即為膠化時間判定時間即為膠化時間UL-94 耐燃標準耐燃標準Unimicron Technology (SuZhou) Corp.59Do The Right Things.Vertical Burning Test for UL 94 Classification20 ± 1 mmBurner6mm max300 ± 10 mmSpecimen10 ± 1 mmCotton放棉花目的 : 看滴垂物是否會引起燃燒Unimicron Technology (SuZhou) Corp.60Do The Right Things.Coefficient of Thermal Expansion熱膨脹係數熱膨脹係數 PositionTemp.Slope : α 1Slope : α 2TgSamplePositionαα 1, αα 2 : Coefficient of thermal expansion (10-5 1 / ℃℃ )Tg : Glass transition temp. (℃ ℃ )Unimicron Technology (SuZhou) Corp.61Do The Right Things.FillerFillers are used to control viscosity, improve strength, reducing shrinkage, coefficient of thermal expansion and water absorption.AdvantagesReduced ShrinkageImproved ToughnessImproved Abrasion ResistanceReduces Water AbsorptionIncreased Thermal ConductivityReduced Thermal Expansion CoefficientDisadvantagesIncreased ViscosityMachining DifficultiesIncreased Dielectric ConstantIncreased WeightUnimicron Technology (SuZhou) Corp.62Do The Right Things.○Si ● OCrystalline silica石英石英 ( 晶體晶體: 片狀片狀 )Fused silica玻璃結構玻璃結構 ( 晶體晶體: 圓球圓球 )○○●○●●○●●○○●●○ ●○● ○●○Unimicron Technology (SuZhou) Corp.63Do The Right Things.Flip Chip Key TechnologiesFlip Chip & Bumping TechnologyFlip Chip AssemblyBumping TechnologyHDI / Build-up Substrate＊＊ Flip Chip 是一個技術是一個技術，， 不是一個不是一個 PackageUnimicron Technology (SuZhou) Corp.64Do The Right Things. Technology vs. PackageFlip Chip is an interconnect technology, not a specific package typeFC CSPFC MLFFC PBGAFC LBGASuper FCStacked fcCSPUnimicron Technology (SuZhou) Corp.65Do The Right Things.主要覆晶封裝生產地區優劣比較主要覆晶封裝生產地區優劣比較Source : 2006.02.13電子時報Unimicron Technology (SuZhou) Corp.66Do The Right Things.Source : 2006.02.13電子時報全球覆晶基板供需預估全球覆晶基板供需預估Kyocera, Fujitsu Kinsus Unimicron Technology (SuZhou) Corp.67Do The Right Things.Flip Chip Assembly TechnologyUnimicron Technology (SuZhou) Corp.68Do The Right Things.Flip Chip Process Steps1. Incoming Wafer2. Incoming Substrate → Pre-bake3. Wafer Mount → 研磨研磨4. Saw5. 2nd Optical Inspect6. Die Attach * ( Plasma, option for flux jetting ) →Fluxing ( or flux jetting ) → Placement(對位放置對位放置) * Reflow →Flux cleaning 續續Unimicron Technology (SuZhou) Corp.69Do The Right Things.Flip Chip Process Steps7. 3rd Optical Inspect8.Underfill (灌底膠灌底膠: 填充保護填充保護Ball Bond )9. *Pre-bake10. *Plasma clean →contact angle measurement11. *Dispense ( 點膠點膠 )12. *Cure9.Back end processing10. *Ring / Lid attach11. *Laser marking12. *Ball mountUnimicron Technology (SuZhou) Corp.70Do The Right Things.FC Die Attach OverviewPick from WaferDie FlipPick from Die FlipperDie FluxPlaceReflowUnimicron Technology (SuZhou) Corp.71Do The Right Things.Reflow ProcessSolder Bump CompositionEutectic → Sn / Pb : 63 /37 →183 ℃( ℃( 熔點熔點 ) )Pb Free Pb Free → Sn / Ag : 96.5 / 3.5 →221 ℃℃Sn / Ag / Cu : 95.5 / 4 / 0.5 Sn / Ag / Cu : 95.5 / 4 / 0.5 →217℃℃Hi-PbHi-Pb → Sn / Pb : 5 / 95 or 10 / 90 → 310 ℃℃1. 1.Reliability Reliability 較好較好 ( ( 溫度溫度 ) )2. 2.抵抗電遷移抵抗電遷移, IMG , IMG 長的比較長長的比較長3. 3.不易熔不易熔Unimicron Technology (SuZhou) Corp.72Do The Right Things.0 10 20 30 40 50 60 70 80 90 1000 10 20 30 40 50 60 70 80 90 100350300250200150100500Atomic Percent TinWeight Percent Tin 金屬成分比例Temperature ℃ 327.502℃ 231.9661℃ 18.3 61.997.8 β SnSn固液共存固液共存Pb固態共金結構L液態固態鉛的結晶結構錫的結晶結構Unimicron Technology (SuZhou) Corp.73Do The Right Things.Die Attach to Underfill Process迴焊後塗佈迴焊後塗佈助助 焊焊 劑劑 塗塗 佈佈晶晶 片片 對對 位位 與與 置置 放放錫錫 球球 迴迴 焊焊清清 洗洗 助助 焊焊 劑劑預預 熱熱 及及 填填 充充 底底 膠膠底底 膠膠 後後 烘烘 烤烤 製製 程程Unimicron Technology (SuZhou) Corp.74Do The Right Things.Plasma Clean ProcessPlasma(氬氣氬氣+氧氣氧氣)利用電漿清洗的原理利用電漿清洗的原理，， 清除物清除物體表面的污染物體表面的污染物，， 使填充膠材使填充膠材與基板材料及晶片表面有極佳與基板材料及晶片表面有極佳的接著能力的接著能力，， 此舉可大幅增加此舉可大幅增加信賴性等級信賴性等級。

Unimicron Technology (SuZhou) Corp.75Do The Right Things.Wetting Angle MeasurementSubstrateθ Water dropletSpec. : < 35%測試測試Plasma對對Substrate版面清潔度版面清潔度的一種量測方式的一種量測方式 Unimicron Technology (SuZhou) Corp.76Do The Right Things.＊＊ Underfill Dispense Pattern ：： 利用毛細現象利用毛細現象，自動填補，自動填補＊＊ Underfill Cure Process Unimicron Technology (SuZhou) Corp.77Do The Right Things.Defect of Underfill→ Fillet Height 底膠高度底膠高度( > ½ chip height )→ Incomplete Underfill 填不滿填不滿→ Underfill Void 底膠孔洞底膠孔洞( < 1% total area )→ Bleeding 爬膠爬膠→ Flow Out 溢膠溢膠→ Substrate Contamination by Underfill 基板沾膠基板沾膠→ Substrate Popcorn 爆板爆板→ Backside Chipout 晶背崩裂晶背崩裂→ Backside Scratch 晶背刮傷晶背刮傷→ Backside Crack Backside Crack 晶背裂痕晶背裂痕Unimicron Technology (SuZhou) Corp.78Do The Right Things.Flip Chip History highlight＊＊ Late 1960s IBM developed C4 ( Cintrolled-Collapse Chip Connection ) High temperature solder bump ( 97Pb / 3Sn, 50ln / 50Pb)＊＊ Early 1990s Underfill technology Laminate substrate with Solder bump ( 97Pb / 3Sn)＊＊ Mid 1990s Eutectic solder bump ( 37Pb / 63Sn ) for low cost＊＊ Early 2000s CPU, Chipset, GPU in production with flip chip formatUnimicron Technology (SuZhou) Corp.79Do The Right Things.Bumping Technology＊＊ UBM ( under bump metallurgy )＊＊ Most Common Bump Formation Process＊＊ Bump Material＊＊ Bumping Defect ModeUnimicron Technology (SuZhou) Corp.80Do The Right Things.Bumping TechnologySiFinal metalPassivation保護層保護層BumpUBMUnimicron Technology (SuZhou) Corp.81Do The Right Things.UBM ( under bump metallurgy )Unimicron Technology (SuZhou) Corp.82Do The Right Things.UBM ( Under Bump Metallization )＊＊UBM 目的目的 ：雙面膠的功能：雙面膠的功能 Al PadUBMSn＊原因＊原因：錫和鋁幾乎不會有反應，兩者不易結合：錫和鋁幾乎不會有反應，兩者不易結合 Unimicron Technology (SuZhou) Corp.83Do The Right Things.UBM ( Under Bump Metallization )＊＊Deposition method : * Sputtering * Evaporation * Electrolytic plating * Electroless＊＊UBM metallurgy --- ( 目前市面上有的目前市面上有的 ) * Al/Ni(V釩釩)/ Cu (Sputtering)+Au( 目的保護銅不被氧化目的保護銅不被氧化) --- 0.1/ 0.3/ 0.4 um 厚度厚度 --- for printing bump * Ti/Cu(sputtering)/Ni(plating) --- 0.1/ 0.2(5)/ 1 um --- for both eutetic / high Pb bump, also apply to Cu pad --- for plating bumpUnimicron Technology (SuZhou) Corp.84Do The Right Things.UBM ( Under Bump Metallization )＊＊UBM metallurgy * Cr-Cu/Cu/Au (evaporation) --- 0.3/ 0.5/ 0.07 um --- for high Pb bump --- for plating bump ( 最古老最古老 , 市面上沒有在使用市面上沒有在使用；； 原因增層原理生成較慢原因增層原理生成較慢,成本較貴成本較貴 ) * Ni(P)/Au(Eless) --- Ni layer over 10um ( 有有Reliability的問題的問題，， 便宜便宜，， 但較不普遍但較不普遍 ) * TiW+Au(sputtering) --- for electroplating Au bump ( 不會出現在不會出現在IC封裝上封裝上 )Unimicron Technology (SuZhou) Corp.85Do The Right Things.UBM ( Under Bump Metallization )＊＊UBM function ( Al / Ni-V / Cu ) * Al : Adhesion layer * Ni-V : wettable back-up layer In case Cu is consumed by Sn, then Al is non-wettable for solder, Ni layer is very stable to wet solder. * Cu : Solderable layer＊＊UBM function ( Ti 鈦是很好的一個雙面膠材料鈦是很好的一個雙面膠材料/ Cu / Ni ) * Ti : Adhesion layer * Cu : - easy-process purpose - Stress buffer * Cu : Solderable layerUnimicron Technology (SuZhou) Corp.86Do The Right Things.Principle of UBM Deposition – Sputtering (漸鍍漸鍍)High voltage induced glow discharge region near target, and produce primary electron.Primary e- hit to Ar, become Ar+ Ar+ hit to target, target atom is sputtered, and produce secondary e-Target atom deposit onto substrateWater coolingCathode ( target )SubstrateAnode－ ＋Primary e-electron ArArArArArReflected ArMMArMArArMMAdatomimpactScattering by ArSputtered atomsNegative glow plasmaLost ionsGround shieldPotential field ( 0.5 – 5kv )Secondary e-5~10 cm＊＊電子帶負電電子帶負電 , 往正極方向移動往正極方向移動 → 需加磁場需加磁場 , 另外需加另外需加 釩釩 的原因的原因 Ni本身易帶磁性本身易帶磁性 , 會破壞原會破壞原磁場磁場,加加 釩釩 可消除可消除Ni的磁性的磁性＊＊ Sputtering mechanism : Momentum Transfer入射離子的動量經由衝撞將能量傳遞給靶表面原子入射離子的動量經由衝撞將能量傳遞給靶表面原子, 使靶物質蒸發使靶物質蒸發Unimicron Technology (SuZhou) Corp.87Do The Right Things.Electroless Deposition＊＊Electrochemical＊＊Maskless deposition process.＊＊Potentially lowest cost.＊＊Pac-Tech, Motorola FCTAl3+ Zn2+ ZincateZn2+ Electroless NickelZn2+ Ni2+ Ni2+ Zn2+ Al3+ Unimicron Technology (SuZhou) Corp.88Do The Right Things.Most Common Bump Formation ProcessUnimicron Technology (SuZhou) Corp.89Do The Right Things.3 Common Bump Formation Technologies＊＊Paste deposition ( Printing ) 印刷印刷 1. Low cost for low to middle volume production 2. Suitable for low alpha solder application＊＊Electroplated solder 電鍍電鍍 1. Wide range composition for Pb / Sn ratio 2. Ultra-fine pitch＊＊Gold stud bump 植金球植金球 1. For lower pin count devices 2. ACF is for adhesive materialUnimicron Technology (SuZhou) Corp.90Do The Right Things.Paste Deposition ProcessAl / NiV / CuIn-situ Sputter Clean; Sputter UBM Across WaferPhotoresistApply photoresist ,Pattern and Develop Etch UBMVarious Solder AlloysPrint Solder (Proprietary Process)Reflow to Form Solder BallRemove Resist鋼板印刷Unimicron Technology (SuZhou) Corp.91Do The Right Things.Principle of Solder Paste Stencil PrintingStencil FrameStencilFilled ApertureSqueegeeSolder Paste Stencil ApertureIC MetallizationWaferPrinting Oversized : Stencil Aperture Opening > Pad SizeUnimicron Technology (SuZhou) Corp.92Do The Right Things.Electroplated Bump Process UBMTemplateTi , CuPlateSn/PbSn/PbStripSn/PbEtchSn/PbReflowUnimicron Technology (SuZhou) Corp.93Do The Right Things.Stencil Printing vs. ElectroplatingUnimicron Technology (SuZhou) Corp.94Do The Right Things.Bump＊＊Regular eutectic solder bump 1. Melting point = 183℃℃ 2. Typical reflow peak temp. range = 220 ~ 240℃℃ 3. Collapse after reflow = 25 ~ 40% of bump height 4. Alpha count = 3 ~ 25 count/cm2 / hr＊＊High Pb solder bump 1. 95 Pb / 5 Sn , liquidus Temp. ~ = 313 ℃℃ 2. 97 Pb / 3 Sn , liquidus Temp. ~ = 320 ℃℃ 3. Typical reflow peak temp. range = 340 ~ 350℃℃ Unimicron Technology (SuZhou) Corp.95Do The Right Things.Bump＊＊Low alpha solder bump 1. Alpha count = 0.02 count/cm2 / hr 2. Ultra low alpha = 0.002 count/cm2 / hr 3. Preferred low alpha option is low alpha PbSn formulations＊＊Lead free bump 1. Pure Sn with M.P. of 232 ℃℃ 2. Eutectic Sn : Cu (0.8%) with M.P. of 227 ℃℃ 3. Eutectic Sn : Ag (3.5%) with M.P. of 221 ℃℃ 4. Sn : Ag (3.5%) : Cu (0.7%) with M.P. of 218 ℃℃ Unimicron Technology (SuZhou) Corp.96Do The Right Things.UBM Quality CheckFor reference only: Test velocity = 100 um/secTip height = 6 um above the bottomNG( cratering )OKSiliconUBMUnimicron Technology (SuZhou) Corp.97Do The Right Things.Stud Bumping＊＊ Solid Phase＊＊Adapted from wire bonding.＊＊Uses special alloy solder compatible with aluminum.＊＊Serial process, existing equipmentUnimicron Technology (SuZhou) Corp.98Do The Right Things.Cost ComparisonEP: electroplating , Evap’n : evaporation , E’less: ElectrolessUnimicron Technology (SuZhou) Corp.99Do The Right Things.Bumping Process Defect Mode＊＊ Mechanical Damage＊＊ Residual UBM＊＊ Residual solder ＊＊ Bridged Bumps＊＊Missing Bumps＊＊As-rec’d＊＊30x Reflows＊＊HTS 1000 hrsUnimicron Technology (SuZhou) Corp.100Do The Right Things.UBM Bump Joint FailureUBM Bump Joint Failure1. Electromigration: ＊＊Governed by current density2.UBM consumption:3. ＊＊Form Cu-Sn intermetallic compound3.If UBM failed:4. ＊＊ Contact resistance significantly increase5. ＊＊ Solder to UBM adhesion greatly reduce6.說明說明 : IC內較容易發生內較容易發生7. 1. 電遷移電遷移 ( 電子流電子流 )8. 2. 錫本身被吃掉錫本身被吃掉Unimicron Technology (SuZhou) Corp.101Do The Right Things.Advantage of Thicker Cu UBM1. Longer solder joint life ＊＊A thicker Cu UBM , more than 10 um , will survive several reflows with IMC spalling. As long as there exists free Cu in the UBM , the Cu 6 Sn5 compound will stick to the free Cu and will NOT spall.2. Reduce current crowding ＊＊Even distribution of current near solder / UBM interface.＊＊ Thicker Cu UBM is the trend.Unimicron Technology (SuZhou) Corp.102Do The Right Things.Copper Pillar Bumping ( CPB ) ＊＊ 專家從事專家從事 reverse engineering 及系統分析之及系統分析之半導體廠商半導體廠商 Chipworks 日前對英特爾日前對英特爾 ( Intel ) 65奈米奈米 Presler 及及 Yonah 處理器進行處理器進行分析並表示其發現分析並表示其發現，， 兩款微處理器中廣泛應兩款微處理器中廣泛應用了銅柱凸塊接合技術用了銅柱凸塊接合技術 ( Copper Pillar Bumping ，， CPB ) ，， 把晶粒連接到印刷接把晶粒連接到印刷接線板的微線板的微。

處理器中處理器中 Unimicron Technology (SuZhou) Corp.103Do The Right Things.Frequevt Seen Defect Mode - Substrate Related＊＊Warpage --- Die attach failed＊＊Bonding pad contamination --- Stitch lift＊＊Substrate / mold cap delam＊＊Cu trace crack / Via crack＊＊Solder ball drop-off --- Either assy related or substrate related＊＊Solder ball pad peeling＊＊Short failure due to “ foreign material “谢谢观赏！谢谢观赏！。