IRF540中文资料.doc

IRF540 N 沟道 MOS 管QUICK REFERENCE DATAVDSS=100Vl0 = 23 ARd眾— 77 rn£2特性'Thrench'工艺 低的导通内阻 快速开关 低热敏电阻综述使用沟渠工艺封装的N通道增强型场效应功率晶体管 应用：DC到DC转换器开关电源电视及电脑显示器电源IRF54O中提供的是SOT78(TO220圮)常观铅的包裹IRF510S中提供的是SOT101(D PAK)表面安装的包裹管脚SOT404 (D2PAK)管脚描述1GateDrain3SourceTabDraintab 1 (w» 42SOT78 仃O220AB)W1 3极限值系统绝对最大值依照限制值符号参数条件最小值最大值单位V DSS漏源极电压Tj二 25 °C to 175°C—100VV.DGR漏门极电压Tj =25 °C to175°C;100VV_GS门源极电压RGS :=20 kQ±20VI_D连续漏电流23ATmb25 °C;VGS = 10 V16AI .DM脉冲漏电流Tmb100 °C;VGS = 10 V92AP_D总功耗Tmb25 °C100WTj, Tsig操作点和存储温度Tmb25 °C-55175r雪崩能量极限值符号参数条件最小值最大值单位E非觅复性雪Unclamped inductive load, IAS = 10 A,■230mJnAS崩能量tp = 350 us, Tj pnor to avalanche = 25°C,T最大非重复VDD W 25 V, RGS = 50 Q, VGS = 10 V,-23A1AS性雪崩电流refei* to fig: 14热敏电阻符号参数条件最小值典型值最大值单位安装底朋交界--15K/W处的热阻P周围环境热阻SOT78対装，口由空间-60■K/WSOT404 封装，PCB 上-50-K/W电特性25r除非另有说明符号参数条件最小值典型值最大值单位V(BR)DSS漏源极朋溃电压^=0V： /D=0.25mA100■VTj=-55°C89■■V门阀电压o34VTj = 175°C1■■VTj=-55°C-■6V漏源极导通电阻VQS =10V,ID = 17A-4977mQRds(眄Tj = 175°C132193mQ向前跨导bs=25V,切=17A8715.5-S门源极泄漏电流^=±20V,P^=0V■10100nA【GSS【DSS0门极电压漏电流VDS = 100V,VGS=0VVDS=80V,VGS=0V,Tj=175°C-0.0510250uAuA2（皈）总共门极电荷ID = 17 A--65nC门源极电荷VDD = 80V,■■10nC务门漏极电荷VGS = 10V--29nC开启延迟时间% =50V, Rd =22 Q,■8■ns兀开启上沿时间% "0V, & =5.6Q-39-nsTd off关闭延迟时间Resistive load■26■nsTf关闭下沿时间-24-ns厶d内部漏电感Measured tab to centre of die■3 5■nH内部漏电感Pleasured f?om drain lead to centre-4 5-nHof die (SOT78 package only)A内部源极电感Measured from source lead to source-7.5-nHbond pad%输入电容VGS =0V, Z = 25V,f=lMHz-8901187PFCqSS输出电容■139167PF4 s反馈电容-83109PF反向二极管极限值及特性符号参数条件最小值典型值最大值单位厶连续源极电流7f=28A：--23A^SM脉冲源极电流■■92A%二极管止向电压-0 941.5Vt,y反向恢复之间"=17A： N=OV,■61■nsOr反向恢复命令-d 7F/dt=100A/us, J^=25V-200-nCFig. 1. Normalised power dissipation. PD^^^OOPJPd辽 c=f(TnJ底座温度•自然功率降低百分比图1:自然功率损耗Normalised Current Derating, ID (%)Fig.2. Normalised continuous drain current. ID% = 1001托25 °c = fCJJ； conditions: VG$ > 10 V底岬温度•漏电流降低白分比图2 : 口然持续漏电流Fig. 3. Safe operating area. Tmb = 25 'C Id & 'dm = Wds)； 'dm single pulse; parameter tp漏源极电压■脉冲漏极电流峰值图3 ：安全操作区域Pulse width, tp (s)脉宽Fig.4. Transient thermal impedance. Zm卜mb = f(t)； parameter D = f/T脉宽舜态热阻抗图4：瞬态热阻抗Drain-Source Voltage, VDS (V)Fig. 5. Typical output characteristics, Tj= 25 C Id = f(%s)漏源极电压■漏极电流图5：典型输出特性Drain-Source On Resistance. RDS(cn) (Ohms)Fig.6. Typical on-state resistance, 7} = 25 C Rds(on)二 f(lo)漏极电流•漏源极导通Ml抗图6：典型导通阻抗Drain current, ID (A)Fig. 7. Typical transfer characteristics. Id = f(Vcs)图7：贝型传递特性图&典型跨导Junction temperature, Tj (C)Fig. 9. Normalised drain-source on-state resistance. RdS(On/RdS(ON)25 9 = f(Tj)图9：漏源极导通阻抗图10：门阀电压Fig. 11. Sub-threshold drain current.ID = f(“Gs)； conditions: Tj = 25 °C; VDS = VGS图11:阈漏极电流Fig. 12. Typical capacitances^ C* COSS9 C®・ C = f(VDS)： conditions: VGS = 0 V： f= 1 MHz图12：典型电容值Source-Drain Diode Current IF (A)Fig. 13. Typical reverse diode current lF = f(VsDs)； conditions: VGS = 0 V; parameter T,图13：典型的反向二极管电流Fig. 74. Maximum permissible non-repetitive avalanche current (lAS) versus avalanche time (tAV); unclamped inductive load图14：战大允许非重复性雪崩电流(IAS)和雪期的时间。