集成电路工艺和版图设计EDA讲座j.ppt

单击此处编辑母版标题样式,,单击此处编辑母版文本样式,,第二级,,第三级,,第四级,,第五级,,,,*,集成电路工艺和版图设计,概述,,Jian FangIC Design Center, UESTC,IC常用术语,园片：硅片,,芯片(Chip, Die)：,,6,,、8,：硅（园）片直径：1,,＝25.4mm,,6,150mm;,8,200mm;,12,300mm;,,亚微米<1m的设计规范,,深亚微米<=0.5 m的设计规范,,0.5 m,、,0.35 m －设计规范（最小特征尺寸）,,布线层数：金属（掺杂多晶硅）连线的层数集成度：每个芯片上集成的晶体管数,IC工艺常用术语,净化级别：Class 1, Class 10, Class 10,000,,每立方米空气中含灰尘的个数,,去离子水,,氧化,,扩散,,注入,,光刻,,…………….,集成电路（Integrated Circuit, IC）,：半导体IC，膜IC，混合IC,,半导体IC：,指用半导体工艺把电路中的有源器件、无源元件及互联布线等以相互不可分离的状态制作在半导体上，最后封装在一个管壳内，构成一个完整的、具有特定功能的电路。

半导体IC,双极IC,MOSIC,BiCMOS,PMOS IC,CMOS IC,NMOS IC,MOS IC及工艺,MOSFET — Metal Oxide Semiconductor Field Effect Transistor,,. — 金属氧化物半导体场效应晶体管,Si,金属,氧化物（绝缘层、SiO,2,）,半导体,MOS(MIS)结构,P－衬底,n,+,n,+,漏,源,栅,栅氧化层,氧化层,沟道,G,D,S,V,T,V,GS,I,D,V,DS,> 0,反型层 沟道,,源（Source）S,,漏（Drain）D,,栅（Gate）G,栅氧化层厚度：,,50埃－1000埃（5nm－100n,m）,,V,T,－阈值电压,,电压控制,N沟MOS（NMOS）,,P,型衬底，受主杂质；,,栅上加正电压，表面吸引电子，反型，电子通道；,,漏加正电压，电子从源区经,N,沟道到达漏区，器件开通,N－衬底,p,+,p,+,漏,源,栅,栅氧化层,场氧化层,沟道,P沟MOS（PMOS）,G,D,S,V,T,V,GS,I,D,+,-,V,DS,< 0,,N,型衬底，施主杂质，电子导电；,,栅上加负电压，表面吸引空穴，反型，空穴通道；,,漏加负电压，空穴从源区经,P,沟道到达漏区，器件开通,。

CMOS,,CMOS,：,Complementary Symmetry Metal Oxide Semiconductor,,,互补对称金属氧化物半导体－特点：低功耗,V,SS,V,DD,V,o,V,i,CMOS倒相器,PMOS,NMOS,I/O,I/O,V,DD,V,SS,C,C,CMOS传输门,,N-Si,P,+,P,+,n,+,n,+,P-阱,D,D,V,o,V,G,V,SS,S,S,V,DD,CMOS倒相器截面图,CMOS倒相器版图,pwell,active,poly,N+ implant,P+ implant,omicontact,metal,A NMOS Example,pwell,Pwell,,Active,,Poly,,N+ implant,,P+ implant,,Omicontact,,Metal,N－type Si,SiO,2,光刻胶,光,MASK Pwell,N－type Si,SiO,2,光刻胶,光刻胶,MASK Pwell,N－type Si,SiO,2,光刻胶,光刻胶,SiO,2,N－type Si,SiO,2,SiO,2,Pwell,pwell,active,Pwell,,Active,,Poly,,N+ implant,,P+ implant,,Omicontact,,Metal,N－type Si,SiO,2,Pwell,SiO,2,光刻胶,MASK active,MASK Active,Si,3,N,4,N－type Si,SiO,2,Pwell,SiO,2,光刻胶,光刻胶,MASK active,MASK Active,Si,3,N,4,N－type Si,SiO,2,Pwell,SiO,2,,光刻胶,光刻胶,Si,3,N,4,N－type Si,SiO,2,Pwell,SiO,2,,场氧,场氧,场氧,Pwell,Si,3,N,4,N－type Si,SiO,2,Pwell,场氧,场氧,场氧,Pwell,N－type Si,SiO,2,Pwell,SiO,2,,场氧,场氧,场氧,Pwell,poly,active,pwell,poly,Pwell,,Active,,Poly,,N+ implant,,P+ implant,,Omicontact,,Metal,N－type Si,SiO,2,Pwell,SiO,2,,MASK poly,场氧,场氧,场氧,Pwell,poly,光刻胶,N－type Si,SiO,2,Pwell,SiO,2,,MASK poly,场氧,场氧,场氧,Pwell,光刻胶,poly,N－type Si,SiO,2,Pwell,SiO,2,,场氧,场氧,场氧,Pwell,poly,N－type Si,SiO,2,Pwell,SiO,2,,场氧,场氧,场氧,Pwell,poly,active,pwell,poly,N+ implant,Pwell,,Active,,Poly,,N+ implant,,P+ implant,,Omicontact,,Metal,N－type Si,SiO,2,Pwell,SiO,2,,MASK N+,场氧,场氧,场氧,Pwell,poly,光刻胶,N－type Si,SiO,2,Pwell,SiO,2,,场氧,场氧,场氧,Pwell,光刻胶,poly,N+ implant,S/D,active,pwell,poly,P+ implant,Pwell,,Active,,Poly,,N+ implant,,P+ implant,,Omicontact,,Metal,N－type Si,SiO,2,Pwell,SiO,2,,MASK N+,场氧,场氧,场氧,Pwell,poly,光刻胶,光,S/D,。