薄膜材料的表征方法一.ppt

薄膜材料的表征方法（一） AbstractuuIntroductionuuGeneral idea and categoryuuX-ray diffraction (XRD)uuX-ray photoelectron spectroscopy (XPS)Introductionuu薄膜(thin film)材料是相对于体材料而言的，是人们采用特殊的方法，在体材料的表面沉积或制备的一层性质与体材料性质完全不同的物质层Introductionuu 在各种薄膜制备与使用过程中，普遍关心 以下几个方面： （1）薄膜的厚度测量； （2）薄膜结构和表面形貌的表征； （3）薄膜成分的分析uu对于不同用途的功能薄膜材料，还需测量其电学、光学、声学、力学、热学、磁学等性质General idea and categoryuuGeneral idea: General idea: beam in and beam in and beam outbeam outuu通过探测出射粒子通过探测出射粒子流的强度分布以及流的强度分布以及q\mq\m、、E E、、θ θ、、φ φ 等参数来分析样品等参数来分析样品的性质。

的性质General idea and categoryuuA: elastic or A: elastic or inelastic inelastic scattering.scattering.uuB: emitted B: emitted particles from particles from the sample. the sample. General idea and categoryGeneral idea and categoryGeneral idea and categoryuuAES (Auger electron spectroscopy)AES (Auger electron spectroscopy)俄歇电子能谱俄歇电子能谱uuLEED (low energy electron diffraction)LEED (low energy electron diffraction)低能电子衍射低能电子衍射uuMEED (medium energy electron diffraction)MEED (medium energy electron diffraction)中能电子衍射中能电子衍射uuRHEED ( reflection high energy electron diffraction)RHEED ( reflection high energy electron diffraction)反射高能反射高能电子衍射电子衍射uuRBS (Rutherfold backscattering)RBS (Rutherfold backscattering)卢瑟福背散射卢瑟福背散射uuSEM (scanning electron microscopy)SEM (scanning electron microscopy)扫描电子显微镜扫描电子显微镜uuSIMS (secondary ion mass spectroscopy)SIMS (secondary ion mass spectroscopy)二次离子质谱二次离子质谱uuTEM (transmission electron microscopy)TEM (transmission electron microscopy)透射电镜透射电镜uuUPS (ultra-violet photoelectron spectroscopy)UPS (ultra-violet photoelectron spectroscopy)紫外光电子谱紫外光电子谱uuXRD (x-ray diffraction) XXRD (x-ray diffraction) X射线衍射射线衍射uuXPS (x-ray photoelectron spectroscopy) XXPS (x-ray photoelectron spectroscopy) X射线光电子谱射线光电子谱uuSTM (scanning tunnel microscopy) STM (scanning tunnel microscopy) 扫描隧道显微镜扫描隧道显微镜uuAFM (atomic force microscopy) AFM (atomic force microscopy) 原子力显微镜原子力显微镜General idea and categoryuuDepth: elliptical polarizationuuStructure：XRD、LEED、RHEED、TEMuuComposition：XPS、UPS、AESuuSurface topography: SEM、SPMuuOptics：UV-VisuuElectricity: Hall、I-V、C-VX-ray diffractionuuThe process The process of X-ray.of X-ray.EX-ray diffractionX-ray diffractionuu布喇格定律：布喇格定律：uuCuCu原子Ｋ原子Ｋα α线线：：X-ray diffractionuu对不同的晶体，其对不同的晶体，其晶体结构和原子间晶体结构和原子间距不同，因而晶面距不同，因而晶面间距也不同．间距也不同．X-ray diffractionuu右图为晶面指右图为晶面指数示意图，对数示意图，对立方晶系：立方晶系：X-ray diffractionuuXRD spectra XRD spectra of KBr of KBr powderpowderX-ray diffractionuuXRD spectra of XRD spectra of ZnO (002) ZnO (002) peak deposited peak deposited on glass.on glass.2θ=34.40,according to ZnO (002) peakX-ray diffraction The intensity of the peakX-ray diffractionuuScherrer Scherrer equation:equation:The full width at half maximumX-ray diffractionuuThe strain and The strain and stress along the c-stress along the c-axis:axis:X-ray diffractionX-ray diffraction 小结uu用途：分析晶体结构。

uu原理：Bragg定律uu特点：a.可分析晶体取向以及结晶程度 b.空间分辨本领较低X-ray photoelectron spectroscopyuuPhotoelectric Photoelectric effect:effect:uuElectron Electron Spectroscopy Spectroscopy for Chemical for Chemical AnalysisAnalysis（（ESCAESCA）） X-ray photoelectron spectroscopyuuA typical A typical spectrum of spectrum of silver.silver.X-ray photoelectron spectroscopyuuThe intensity of a XPS peak is given by:The intensity of a XPS peak is given by:uuRelative atomic sensitivity factor S:Relative atomic sensitivity factor S:uuSo the atomic percentages for an So the atomic percentages for an unknown element can be calculated by:unknown element can be calculated by:X-ray photoelectron spectroscopyuuThe calculation of The calculation of the peak intensity. the peak intensity. X-ray photoelectron spectroscopyuuThe chemical shift.The chemical shift.X-ray photoelectron spectroscopy 小结uu用途：分析样品化学成分及元素分布。

uu原理：光电效应uu特点：a.可探测除H、He以外的所有元素 b.能在不太高的真空度下进行分析 c.可反映相应元素的化合态。