电源开关管stp10nk70z.pdf

1/10October 2002 STP10NK70Z STP10NK70ZFP N-CHANNEL 700V - 0.75Ω - 8.6A TO-220/TO-220FP Zener-Protected SuperMESH™Power MOSFET ITYPICAL RDS(on) = 0.75 Ω IEXTREMELY HIGH dv/dt CAPABILITY IIMPROVED ESD CAPABILITY I100% AVALANCHE RATED IGATE CHARGE MINIMIZED IVERY LOW INTRINSIC CAPACITANCES IVERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip- based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh™ products. APPLICATIONS IHIGH CURRENT, HIGH SPEED SWITCHING IIDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ORDERING INFORMATION TYPEVDSSRDS(on)IDPw STP10NK70Z STP10NK70ZFP 700 V 700 V 0.85 Ω 0.85 Ω 8.6 A 8.6 A 150 W 35 W SALES TYPEMARKINGPACKAGEPACKAGING STP10NK70ZP10NK70ZTO-220TUBE STP10NK70ZFPP10NK70ZFPTO-220FPTUBE TO-220TO-220FP 1 2 3 INTERNAL SCHEMATIC DIAGRAM STP10NK70Z/STP10NK70ZFP 2/10 ABSOLUTE MAXIMUM RATINGS (?) Pulse width limited by safe operating area (1) ISD≤8.6A, di/dt ≤200A/µs, VDD≤ V(BR)DSS, Tj≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA AVALANCHE CHARACTERISTICS GATE-SOURCE ZENER DIODE PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. SymbolParameterValueUnit STP10NK70ZSTP10NK70ZFP VDSDrain-source Voltage (VGS= 0)700V VDGRDrain-gate Voltage (RGS= 20 kΩ)700V VGSGate- source Voltage± 30V IDDrain Current (continuous) at TC= 25°C8.68.6 (*)A IDDrain Current (continuous) at TC= 100°C5.45.4 (*)A IDM(?)Drain Current (pulsed)3434 (*)A PTOTTotal Dissipation at TC= 25°C15035W Derating Factor1.200.28W/°C VESD(G-S)Gate source ESD(HBM-C=100pF, R=1.5KΩ)4000KV dv/dt (1)Peak Diode Recovery voltage slope4.5V/ns VISOInsulation Withstand Voltage (DC)-2500V Tj Tstg Operating Junction Temperature Storage Temperature -55 to 150 -55 to 150 °C °C TO-220TO-220FP Rthj-caseThermal Resistance Junction-case Max0.833.6°C/W Rthj-ambThermal Resistance Junction-ambient Max62.5°C/W TlMaximum Lead Temperature For Soldering Purpose300°C SymbolParameterMax ValueUnit IARAvalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tjmax) 8.6A EASSingle Pulse Avalanche Energy (starting Tj= 25 °C, ID= IAR, VDD= 50 V) 350mJ SymbolParameterTest ConditionsMin.Typ.Max.Unit BVGSOGate-Source Breakdown Voltage Igs=± 1mA (Open Drain)30V 3/10 STP10NK70Z/STP10NK70ZFP ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq.is defined as a constant equivalent capacitance giving the same charging time as Cosswhen VDSincreases from 0 to 80% VDSS. SymbolParameterTest ConditionsMin.Typ.Max.Unit V(BR)DSSDrain-source Breakdown Voltage ID= 1 mA, VGS= 0700V IDSSZero Gate Voltage Drain Current (VGS= 0) VDS= Max Rating VDS= Max Rating, TC= 125 °C 1 50 µA µA IGSSGate-body Leakage Current (VDS= 0) VGS= ± 20V±10µA VGS(th)Gate Threshold VoltageVDS= VGS, ID= 100µA33.754.5V RDS(on)Static Drain-source On Resistance VGS= 10V, ID= 4.5 A0.750.85Ω SymbolParameterTest ConditionsMin.Typ.Max.Unit gfs(1)Forward TransconductanceVDS= 15 V,ID= 4.5 A7.7S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS= 25V, f = 1 MHz, VGS= 02000 190 41 pF pF pF Coss eq.(3)Equivalent Output Capacitance VGS= 0V, VDS= 0V to 560V98pF SymbolParameterTest ConditionsMin.Typ.Max.Unit td(on) tr Turn-on Delay Time Rise Time VDD= 350 V, ID= 4.5 A RG= 4.7Ω VGS= 10 V (Resistive Load see, Figure 3) 22 19 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 560V, ID= 9 A, VGS= 10V 64 12 33 90 nC nC nC SymbolParameterTest ConditionsMin.Typ.Max.Unit td(off) tf Turn-off Delay Time Fall Time VDD= 350 V, ID= 4.5 A RG= 4.7Ω VGS= 10 V (Resistive Load see, Figure 3) 46 19 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD= 560 V, ID= 9 A, RG= 4.7Ω, VGS= 10V (Inductive Load see, Figure 5) 11 10 22 ns ns ns SymbolParameterTest ConditionsMin.Typ.Max.Unit ISD ISDM(2) Source-drain Current Source-drain Current (pulsed) 8.6 34 A A VSD(1)Forward On VoltageISD= 8.6 A, VGS= 01.6V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD= 9 A, di/dt = 100A/µs VDD= 35V, Tj= 150°C (see test circuit, Figure 5) 720 5.4 15 ns µC A STP10NK70。