TFTLCD新技术介绍课件.pptx

TFT-LCD新技术介绍课程内容课程内容课程目标课程目标了解TFT LCD新技术现况1.TFT新技术2.CF新技术3.Cell新技术课课 程程 大大 纲纲1. TFT新技术介绍1.1 4-Mask1.2 GOA1.3 High aperture ratio (Low K PVX)2. CF新技术介绍2.1 COA3. Cell新技术介绍 3.1 Vertical Alignment (MVA,PVA,PSA) 3.2 Homogenous Alignment (IPS, FFS)4. 总结玻璃基板玻璃基板玻璃基板玻璃基板扫描描电极极金金属属沉沉积栅电极极形成形成绝缘层沉沉积有源有源层沉沉积(a-Si)欧欧姆接姆接触触层沉沉积有源有源层形成形成信信号号金金属属层沉沉积信信号号线形成形成欧欧姆接姆接触触层形成形成钝化化层沉沉积接接触触孔形成孔形成像素像素电极极层沉沉积像素像素电极极形成形成像素像素电极极信信号号线钝化化层欧欧姆接姆接触触层有源有源层栅绝缘层扫描描电极极接接触触孔孔1.1 4mask - Array 5mask工艺流程Mo/Al/Mo Bus Line4Mask Flow5Mask FlowGate Al/Mo FormationG-SiNx & AS Layer Dep.1st Mo/Al/Mo(Wet)A.E./Ash.(Dry)2nd Mo/Al/Mo(Wet)n+Si(Dry)SE Mo/Al/Mo Dep.SE MaskSE Etch.(Wet)SE MaskAS StripSE Mo/Al/Mo DepAS PhotoAS Etch(Dry)n+Si(Dry)1.1 4Mask Introduction-. 4Mask & 5Mask 差异AS Photo & AS Strip SavedSE 2nd Mo/Al/Mo(Wet) process added5Mask TFT结构1.1 4Mask-Photo工艺 1. 光罩简介灰阶光罩灰阶光罩Gray Tone Mask半色调光罩半色调光罩Half Tone Mask普通光罩普通光罩不透光透光不透光入射光光罩光强光阻玻璃基板入射光光罩光强光阻玻璃基板不透光不透光部分透光透光透光透光透光入射光光罩透光不透光不透光部分透光透光光强光阻玻璃基板SSM (Single Slit Mask): 与GTM类似，只是中间的狭缝只有一条 应用Mo/Al/Mo的他社(S, B社)是使用Post Bake Skip的PRCompanyGeneration4MaskMetalMaskFlowPR ThickPost BakeEtchantS8GOMo/Al/Mo &Cu/TiSSM1W/1D2.8135 H3PO4,CH3COOH,HNO3(7%)7GOMo/Al/Mo &Cu/TiSSM2W2D2.1Skip5GOMo/Al/Mo &Cu/TiGTM2W2D 1.9?L8GOCu/MoTiHTM2W2D1.9SkipH2O27GOCu/MoTiHTM2W2D1.9SkipH2O2OMoHTM1W1D2.1SkipH3PO4,CH3COOH,HNO3(3%)6GOCuHTM2W2D1.9SkipH2O2B8GOMo/Al/MoHTM2W2D2.8130H3PO4,CH3COOH,HNO3(4% )6GOMo/Al/MoHTM2W2D2.2130H3PO4,CH3COOH,HNO3(28%)5GOMoHTM1W1D2.1SkipA8GOMo/Al/MoGTM & HTM7GOMo/Al/MoGTM2W2D2.0SkipH3PO4,CH3COOH,HNO3(25%)我司 : HNO3 : 1.9wt%, Additive 無2. 竞争社4Mask工程应用现况1.1 4Mask-Photo工艺 3. Mask技术比较_GTM / HTM / SSMConceptDesign1.3m Slit/Bar Half Tone layer(Transmittance 3545%) 2.25m slit under exposure resolution Meritl Short deliveryl Mask Cost low for only 1 layerl Wide Photo marginl Good uniformity for large area exp. process l Short Exp. Timel Good for short channel Demeritl Narrow Photo Marginl Long Channel Lengthl Bad uniformity for large area exp. processl NG for short channell Mask Cost high & Delivery longl Narrow Photo Margin (Not possible with Canon)ACI L= 4.5mACI L= 3.5mACI L= 5.5mGray Tone MaskHalf Tone MaskSingle Slit MaskFormation methods for 4 mask TFT with the same Ion current2.25m1.3m 1.4m1.3m1.1 4Mask-Photo工艺 ITEMHigh BakeHard Bake SkipRemark制造Resin Type使用高分子 Resin使用低分子ResinPR Manufacture进行提炼低分子工程-增加曝光 Speed 提高剂-Cost制造单价上升 20% -特征Thermal StabilityPost Bake 可以应用(130)Post Bake SkipChemical ResistanceVery GoodNormalCrack by Strong Etchant (NH034%)Coating PerformanceGoodGoodMuraGoodGoodWet Etch BiasGood(Very Good)GoodDry Etching ResistanceGoodGoodStripNormalGood4MaskPR ThickPoor(2.8)Normal(2.2)PR 使用量Exp.EnergyPoor(52mJ)Normal(41mJ)Exp. Tact Time cf)TOK Site Test 曝光量MarginNormalVery Good因Post Bake 变化的形状MetalMoAlMoMo/CuCompetitionS.S(7,8G), BOE(6,8G)L(7,8G), BOE(4,5G)PhotoParticlePost Bake Fume 有-Post Bake 污染严重Pattern Angle(Post Bake 以后)高 (Via Layer 很难)低Via PR Angle 90% (4) 硬度: 3H现有材料的供应商Honeywell, Dongjin, JSR, AZL 社(Korea)S 社(Korea)notenoteMobileTV1G3GMobile1G4GMobileS 社社 TV Market ShareJ社,90.0%7G8GTVDongjin,10.0%低介电常数材料在韩国LCD的适用情况1.3 High aperture ratio (Low k PVX)材料反应原理材料反应原理感光成分丙烯酸树脂萘的化合物茚羧酸碱性溶液聚合物间以及聚合物与感光成分的交联聚合物感光成分-. 通过使用low K材料可以实现高开口率以及平坦TFT基板的目的1.3 High aperture ratio(Low k PVX)光敏性材料制程（正性材料与负性材料）1.3 High aperture ratio(Low k PVX)节省节省2步步制程制程现有PVX制程与Low K制程差异PVX Dep.PR CoatingSoft BakeExposureDevelopmentEtchStripResin CoatingSoft BakeExposureDevelopmentBleachingCuring光敏材料PVX制程现有PVX制程1.3 High aperture ratio(Low k PVX) Array ProcessEtchHMDS treatment1. SE制程完成3-1.黄光: 树脂材料涂布 -. 材料变更: PR 树脂2. PVX 沉积 -. 制程节省 在黄光coating制程中完成1.3 High aperture ratio(Low k PVX)高开口率接触孔制程3-2. 黄光: 曝光 & 显影 -. 制程同现有TFT制程1.3 High aperture ratio(Low k PVX)4. Dry Etch: SiNx蚀刻 -. 与现有制程类似5. Final TFT -. 剩余制程同现有制程相同显影时间显影时间 Cure温度温度Cure时间时间Bleach强度强度 Cure温度温度Cure时间时间 Cure温度温度Cure时间时间曝光强度曝光强度过孔形貌过孔形貌透过率透过率硬度硬度1.3 High aperture ratio(Low k PVX)附着力工艺条件摸索TemperatureTemperaturea a b b c c ddTimeTimeAdherenceAdherenceASTMASTM100%100%100%100%GBGB0 Degree0 Degree0 Degree0 DegreeASTMGBTarget: 100%,0 Degree1.3 High aperture ratio(Low k PVX)曝光显影不足的过孔形貌曝光显影充足的过孔形貌Resin ScumResin的Ashing Rate与PR很接近；GI的刻蚀方法与MP的GI刻蚀方法相同；为了增大曝光与显影的Process Margin，在GI Etch前增加Ashing，确保过孔形成；根据最终所需的Resin厚度与Capa.可适当增加Ashing时间。

1.3 High aperture ratio(Low k PVX)Via Hole 稳定形成ItemSpec.Actual硬度3H3H透过率90%93.5% (500mJ)硬度、透过率达到指标1.3 High aperture ratio(Low k PVX)60sDevelop Condition: TMAH 2.43% 21 65s70sIon, Vth Ta-Shan Chang et al, IEEE ELECTRON DEVICE LETTERS, VOL. 27, NO. 11, NOVEMBER 20061.3 High aperture ratio(Low k PVX)TFT特性比较Bad ViaDevelop TimeLongShort 树脂材料对显影液(TMAH)较敏感,同一张Glass上Via Hole CD在不同部位随显影时间不同变化较大.此种不良可以通过降低显影液浓度提高显影时间,来提高同一张Glass上的显影的均匀性来解决.1.3 High aperture ratio(Low k PVX)1.3 High aperture ratio(Low k PVX)Appendix- Material Detail propertiesAppendix- Material Detail properties2.COA-优劣与应用 优点 : 高开口率 直接与TFT像素对位 ITO overlap data bus rule不利 : Array工艺负责 Array yield 受影响 Heavier loading on glass transporting Rework issue2631.540424655HD60 50 39 37 34 28 FHD85 70 55 52 48 40。