蓝宝石pss工艺流程.ppt
31页
1. Company Overview,Aug 2007,HQ : 526 Chobu-Ri, Mohyun-Myeon, Yong-In, KoreaFactory : 한국광기원 시험생산 센터(전라남도 광주),Address,Semiconductor Technology Development, and Services,,,,,Lim, Heechoul,HQ Tel: +82 31 339 2970; Fax: +82 31 339 2972 Factory Tel : +82 62 605 9566,PSS and LED Production Equipment,,,,firstar0802@,Type of Business,Establishment,CEO,Major Products,Contact,E-mail,Firstar Photon Co., Ltd,,Company Name,1,,,Homepage,2,: MOCVD(2”x 6ea),,,,2. Factory 광주,,3. Products PSS,3,Typical Size : 2”, 3”, 4”,PSS(Patterned Sapphire Substrate) for Epi Growth,,,430μm ~ 900μm,Available Wafer Thick,Within : ≤ 2%, W to W : ≤ 3%,,Uniformity,,China, Japan, USA,Current Sales,4. PSS production overview,4,,5. Process of PSS production,5,,,Etching,,Develop,Photo,Exposure,1. Photo-resist coating,2. Stepping & Exposure,3. Developing exposed patterns,4. Dry etching by ICP-RIE,,6. PSS Equipments,6,Stepper system,Track system,ICP-RIE,Wet bath,Measurement,7,,7. PSS Pattern List,7,,8. PSS Pattern Image Product D0B (4x1 pattern),8,,8. PSS Pattern Image Product B5C (2.5 x 1.5 pattern),9,,8. PSS Pattern Image Product B8B (2.8 x 1.2 pattern),10,,8. PSS Pattern Image Product B0A (2 x 1 pattern),11,,8. PSS Pattern Image Product A5A (1.5 x 1 pattern),12,,9. Inspection Standard A, B, C grade,13,,10. Process of PSS production D1.90,14,,,,10. PSS Shape & LED Chip Characteristic D1.84,15,,,16,,10. PSS Shape and LED Chip Characteristics D1.78,,,,10. PSS Shape & LED Chip Characteristic D1.78,17,,,,10. PSS Shape & LED Chip Characteristic D1.56,18,,,,10. PSS Shape & LED Chip Characteristic D1.56,19,Chip size: 14mil,,11. PSS depth vs Intensity,20,Normal wafer,Depth=1.2 ㎛,Depth=1.7 ㎛,Depth=1.4 ㎛,14mil,Depth=1.9 ㎛,Depth=1.84 ㎛,Depth=1.78 ㎛,Depth=1.56 ㎛,24mil,,,,,,,,,,,,,,,,,55,70,98,600(24mil) =130(14mil),650(24mil) =132(14mil),675(24mil) =134(14mil),700(24mil) =137(14mil),PSS depth vs Intensity,128,,12. Epi Growth Equipment(MOCVD : NEXTPAK NEP2007),21,,13. Process SEM Image of Epitaxial Growth of GaN with PSS substrate,22,,14. SEM after Epi Growth with PSS,23,,15. View of PSS state by microscope,24,Growth condition : u-GaN1010℃,n-GaN1030 ℃ ,u-GaN pressure250,u-GaN,n-GaN Ga=95,, SEM Images of GaN Layers on PSS Patten,25,, Effcet of Enhancement Output related to PSS Patten Shape,26,, Effcet of Enhancement Output related to PSS Patten Shape,27,,Effcet of Enhancement Output related to PSS Patten Shape,28,, Effcet of Enhancement Output related to PSS Patten Shape,29,, Effcet of Enhancement Output related to PSS Patten Shape,30,焗璭驥?碅铲敐n鴵w臐[O?E緙O貛綖w:?>詊浗綶疲?犣??蠆螮? wL挏蝈?8 YH旨誘ZGN周k曩OOMG ?*鰴?到jI 惠譬蚶莧?鄋嵛8#=Eos玓陧扎喦3殚?U6???cFq?弲b转蕿τㄦа鯅軋嬸HＫ[伾k J 嬹t倖?核i书a{#4?ii? e炪畞?賉鏫臠X馥i鳹e,m?闱魰蠰撁比G诡h]K??邈駹頷輿膋 鍔? Z?DC焒?z“/讖唯?1?涍5VM?{庢}?霅 峎窒?oz?菥棇 ?D?N?:z“ ><陑,。
