后羿hy1908 80V90A mos管-hy1908场效应晶体管参数_骊微电子.docx
HY1908D/U/VN-Channel Enhancement Mode MOSFET深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商Features·80V/90A,Pin DescriptionG DSG DSG D SR=7.8 mW (typ.) VGS=10VDS(ON)· Avalanche Rated· Reliable and Rugged· Lead Free and Green Devices Available (RoHS Compliant)TO-252-2LTO-251-3LTO-251-3SApplications· Power Management for Inverter Systems.N-Channel MOSFETOrdering and Marking InformationDU V HY1908HY1908HY1908XYMXXXXXXXYMXXXXXXXYMXXXXXXPackage CodeD : TO-252-2LU : TO-251-3LV : TO-251-3LDate CodeXYMXXXXXXNote: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead- Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-oduct and/or to this document at any time without notice.HY1908D/U/VAbsolute Maximum RatingsSymbolParameterRatingUnitCommon Ratings (TC=25°C Unless Otherwise Noted)VDSSDrain-Source Voltage80VVGSSGate-Source Voltage±25TJMaximum Junction Temperature175°CTSTGStorage Temperature Range-55 to 175°CISDiode Continuous Forward CurrentTC= 25°C90AMounted on Large Heat SinkIDMPulsed Drain Current *TC= 25°C315*AIDContinuous Drain CurrentTC= 25°C90ATC= 100°C59PDMaximum Power DissipationTC= 25°C64WTC= 100°C32RqJCThermal Resistance-Junction to Case2.35°C/WRqJAThermal Resistance-Junction to Ambient110Avalanche RatingsEASAvalanche Energy, Single PulsedL=0.5mH214*mJNote：* Repetitive rating ; pulse width limiited by junction temperature* Drain current is limited by junction temperature* VD=64VCElectrical Characteristics(T= 25°C Unless Otherwise Noted)SymbolParameterTest ConditionsHY1908UnitMin.Typ.Max.Static CharacteristicsBVDSSDrain-Source Breakdown VoltageVGS=0V, IDS=250mA80-VIDSSZero Gate Voltage Drain CurrentVDS=80V, VGS= 0V-1mATJ=85°C-10VGS(th)Gate Threshold VoltageVDS=VGS, IDS=250mA234VIGSSGate Leakage CurrentVGS=±25V, VDS= 0V-±100nARDS(ON)*Drain-Source On-state ResistanceVGS=10V, IDS= 45A-7.89.0mWDiode CharacteristicsVSD*Diode Forward VoltageISD=45A, VGS= 0V-0.81.2VtrrReverse Recovery TimeISD=45A, dlSD/dt=100A/ms-30-nsQrrReverse Recovery Charge-25-nC深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商CElectrical Characteristics (Cont.) (T= 25°C Unless Otherwise Noted)SymbolParameterTest ConditionsHY1908UnitMin.Typ.Max.Dynamic CharacteristicsRGGate ResistanceVGS=0V,VDS= 0V,F= 1MHz-1.2-WCissInput CapacitanceVGS=0V, VDS=25V,Frequency=1.0MHz-3864-pFCossOutput Capacitance-365-CrssReverse Transfer Capacitance-239-td(ON)Turn-on Delay TimeVDD=40V, RG=6 W, IDS=45A, VGS=10V,-26-nsTrTurn-on Rise Time-42-td(OFF)Turn-off Delay Time-64-TfTurn-off Fall Time-20-Gate Charge CharacteristicsQgTotal Gate ChargeVDS=64V, VGS=10V, IDS=45A-84-nCQgsGate-Source Charge-16-QgdGate-Drain Charge-26-Note * : Pulse test ; pulse width £300ms, duty cycle£2%.Avalanche Test CircuitSwitching Time Test CircuitGate Charge Test CircuitHY1908D/U/VDevice Per UnitPackage TypeUnitQuantityTO-252-2LTube75TO-252-2LReel2500TO-251-3LTube75TO-251-3STube75Package InformationTO-252-2LCOMMON DIMENSIONSSYMBOLmmMINNOMMAXA2.202.302.40A10.00-0.20A20.971.071.17b0.680.780.90b35.205.335.50c0.430.530.63D5.986.106.22D15.30REFE6.406.606.80E14.63-e2.286BSCH9.4010.1010.50L1.381.501.75L12.90REFL20.51BSCL30.88-1.28L4-1.00L51.651.801.950°-8°TO-251-3LCOMMON DIMENSIONSSYMBOLmmMINNOMMAXA2.202.302.40A20.971.071.17b0.680.780.90b20.000.040.10b2'0.000.040.10b35.205.335.50c0.430.530.
