元器件bt131芯片-bt131 to92管脚排列-BT131可控硅参数_骊微电子.docx
UTC BT131TRIAC1TO-92TRIACS LOGIC LEVELDESCRIPTIONPassivated, sensitive gate triaces in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers. logic integrated circuits and other low power gate trigger circuits.SYMBOLMT2G1:MT1 2:GATE 3:MT2MT1ABSOLUTE MAXIMUM RATINGSPARAMETERSYMBOLRATINGSUNITRepetitive Peak Off-State VoltageBT131-500 BT131-600 BT131-800VDRM500*600*800*VRMS On-State CurrentFull Sine Wave; Tlead51°CIT(RMS)1ANon-Repetitive Peak On-State Current (Full Sine Wave; Tj=25°C prior to surge)t=20ms t=16.7msITSM1617.6ACircuit Fusing (t=10ms)I2t1.28A2sRepetitive Rate of Rise of On-State Current after Triggering ITM=1.5A, IG=0.2A, dIG/dt=0.2A/msT2+G+ T2+G- T2-G- T2-G+dIT/dt50505010A/msPeak Gate VoltageVGM5VPeak Gate CurrentIGM2APeak Gate PowerPGM5WAverage Gate Power (over any 20ms period)PG(AV)0.5WOperating Junction TemperatureTj125°CStorage temperatureTstg-40150°C*Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/ms.THERMAL RESISTANCESPARAMETERSYMBOLMINTYPMAXUNITThermal Resistance Junction to LeadFull Cycle Half CycleRth j-lead6080K/WThermal Resistance junciton to Ambient (PCB mounted ;lead length=4mm)Rth j-lead150K/WELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise specified)PARAMETERSYMBOLTEST CONDITIONSMINTYPMAXUNITSTATIC CHARACTERISTICSGate Trigger CurrentIGTVD=12V, IT=0.1AT2+G+ T2+G- T2-G- T2-G+0.41.31.43.83337mALatching CurrentILVD=12V, IGT=0.1AT2+G+ T2+G- T2-G- T2-G+1.24.01.02.55858mAOn-State Voltage Latching CurrentVTIT=2.0A1.21.5VGate Trigger VoltageVGTVD=12V, IT=0.1AVD=400V, IT=0.1A, Tj=125°C0.20.70.31.5VOff-state Leakage CurrentIDVD=VDRM(max), Tj=125°C0.10.5mADYNAMIC CHARACTERISTICSHolding CurrentIHVD=12V, IGT=0.1A1.35mACritical Rate of Rise ofoff-state VoltagedVD/dtVDM=67% VDRM(max), Tj=125°CExponential waveform,RGK=1k515V/msGate Controlled Turn-on TimetgtITM=1.5A,VD=VDRM(max), IG=0.1AdIG/dt=5A/ms2msTYPICAL CHARACTERISTICSFigure 1.Maximum on -state Dissipation.Ptot vs RMS On- state Current,IT(RMS),Where =conduction Angle.1.4 Ptot/WTsp(max)/C 104Figure 4.Maximum Permissible RMS Current IT(RMS) vs Lead Temperature Tlead1081.2 IT(RMS)/A1.210.80.60.40.20 =180 =120 =90 =60 =3010711011311611912212510.80.60.40.2000.20.40.60.81IT(RMS)/A1.2-50050Tsp/100150Figure 2. Maximum Permissible Non-repetitivePeak On-state Current ITSM,vs Pulse Width tp,for Sinusoidal Currents,tp 20ms1000 ITSM/AITITSMtimeTj initial=25max100dIT/dt limit32.52.01.51Figure 5.Maximum Permissible Repetitive RMS on-state Current IT(RMS),vs Surge Duration,for SinusoidalCurrents,f=50Hz;Tlead 51IT(RMS)/A1010usT2-G+ quadrant 100us1ms T/s10ms100ms0.500.010.1110Surge Duration /SFigure 3 .Maximum Permissible Non-Repetitive peak on-state Current ITSM,vs Number of Cycles, for Sinusoidal Currents,f=50HzITSM/AIT ITSMtimeTj initial=25max121086420Figure 6.Normalised Gate Trigger Voltage VGT(Tj)/ VGT(25),vs Junction Temperature TjVGT(Tj)1.6 VGT(25)1.41.210.80.60.4110100Number of Cycles at 50Hz1000-50050Tj/100150IGT(Tj)3 IGT(25)Figure 7.Normalised Gate Trigger current IGT(Tj)/IGT(25),vs Junction Temperature TjT2+G+2IT/AFigure 10.Typical and Maximum On-state Characteristic2.52T2+G- T2-G- T2-G+1.5Tj=125Tj=25 Vo=1.0Vtyp1.51.51 Rs=0.21Ohms0.5max0-50
